FQB33N10TM Discrete Semiconductor Products

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The FQB33N10TM is a power transistor device that combines the high-speed switching capabilities of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) with high drain-source breakdown voltage. This device is suitable for applications operating at frequencies up to 500 MHz in applications such as power supplies, RF power amplifiers and cellular base stations. It is suitable for high efficiency motor drives, high-frequency amplifier circuits and high-speed logic circuits.

The FQB33N10TM features a planar double-diffused metal-oxide-semiconductor (DMOS) technology and has an integral surface protection against dangerous malfunctions due to electrostatic discharge. It is designed to reduce thermal resistance between the die and the driver while providing excellent thermal performance. The FQB33N10TM features high-power density and high current handling capabilities, allowing it to be used in applications with power densities as high as 20W/mm2.

The FQB33N10TM has a maximum drain-source voltage of 10V and a maximum drain current of 33A. It has a maximum power dissipation of 300W and has an internal gate source voltage of -2V. It also has a turn-on delay time of 200ns and a turn-off delay time of 800ns.

The FQB33N10TM is capable of continuous conduction mode as well as pulse-width modulation (PWM) control for appropriate applications. This makes it suitable for use in automotive lighting systems and other applications that require high current pulses in a very short duration. It is also ideal for high frequency switching and high power switching applications. It has a low on-resistance (RDS) of only 33mOhms, making it ideal for applications that require high switching speeds while maintaining low power losses.

The FQB33N10TM features a good thermal characteristic profile with an operating temperature range from -55° C to +175° C. It is both RoHS2 and REACH compliant, making it suitable for device assemblies in both leaded and lead-free assemblies. The FQB33N10TM also offers reduced energy consumption, longer life and improved reliability due to its hight quality semiconductor components.

The FQB33N10TM works using the principle of MOSFET technology ( Metal Oxide Semiconductor Field Effect Transistor). This technology is used to control the flow of current in an electrical circuit. It works by controlling the electric field between a gate and the channel of the MOSFET, with the gate acting as the control electrode. The applied voltage between the gate and channel will either increase or decrease the electric field, depending on the voltage that is applied. When the electric field is increased, the current flow is increased, and when the electric field is reduced, the current flow is decreased.

The FQB33N10TM is a power MOSFET suitable for high frequency switching and high power switching applications. Its low on-resistance and excellent thermal performance allow it to be used in applications with high power densities. It also has good thermal characteristics, low energy consumption and improved reliability. Therefore, it is suitable for use in automotive lighting systems, high frequency switching and high power switching applications.

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