Allicdata Part #: | FQP630-ND |
Manufacturer Part#: |
FQP630 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9A TO-220 |
More Detail: | N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-22... |
DataSheet: | FQP630 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP630 has been designed as a power field effect transistor (FET), specifically a single, depletion mode N-channel FET. By understanding the application field and working principle, engineers and technicians will be better equipped to utilize these transistors to their full potential.
Application Field
The FQP630 is most favorably employed in switching applications such as motor control, high speed switching and power amplifier applications. Additionally, it can also be used for low-side switching in DC-to-DC converters and Class D audio amplifiers. It can be used for a variety of different applications due to the increased power gains its high switching frequency, low gate drive current, and low on-state resistance.
Working Principle
The FQP630 works on a principle familiar to most electronic engineers and technicians: a power FET. This FET works by using a series of conductive channels (or “poles”) that are connected to the source. When a voltage is applied to the gate of the FET, the current passes through these poles and out of the drain to the load. The resistance of the FET varies depending on the voltage applied, which affects the way in which the current passes through the poles, thus controlling the amount of power delivered to the load.
The FQP630 is a depletion mode FET, meaning that when the voltage applied to the gate is zero, the FET has an OFF-state resistance and does not pass any current through the poles. When a voltage is applied, the resistance of the FET is decreased and current is able to flow through the poles. The resistance of the FET can be adjusted by varying the voltage applied to the gate (or “gate voltage”), and this is how the power is regulated to the load.
The FQP630 also has a high switching frequency and low gate drive current, allowing it to supply higher power gains than other power FETs. This is because the FQP630 can be switched on and off very quickly without expending too much energy, allowing it to deliver higher power gains.
Conclusion
The FQP630 is a power field effect transistor (FET) that is designed for use in switch applications such as motor control, high speed switching and power amplifier applications. It works on a principle familiar to most engineers and technicians, and its high switching frequency, low gate drive current, and low on-state resistance allow for increased power gains. By understanding its application field and working principle, engineers and technicians will be better equipped to utilize these transistors to their full potential.
The specific data is subject to PDF, and the above content is for reference
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