Allicdata Part #: | FQP630TSTU-ND |
Manufacturer Part#: |
FQP630TSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9A TO-220 |
More Detail: | N-Channel 200V 9A (Tc) 78W (Tc) Through Hole TO-22... |
DataSheet: | FQP630TSTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQP630TSTU is an N-channel logic level Field Effect Transistor (FET). It is part of the Fairchild Semiconductor FET family, which includes a large range of transistors, used across a variety of applications. FQP630TSTU transistors are specifically designed to be used in high performance switching applications, and as a result, offer low capacitance and on-state resistance.
FQP630TSTU transistors can be used in a number of different applications, such as sensitive switches and computer logic. They are also capable of being used in high speed switching operations, and in advanced data communications systems. A wide range of specifications make it possible to use FQP630TSTU transistors in a variety of applications, including power supplies and driver circuit applications.
The FQP630TSTU transistor is a P-channel field effect transistor, which is able to withstand high temperatures and pressures. It is also capable of providing high performance, low leakage and low distortion levels. Its unique design allows for higher switching speed and higher current output, making it an ideal choice for many applications.
The working principle behind the FQP630TSTU is based on the flow of current in a single direction, from the source terminal to the drain terminal. This flow of current is controlled by the gate voltage, which is applied to the gate terminal. When the gate voltage is high, the current flows from the source terminal to the drain terminal, while when the gate voltage is low, the current flow is blocked. By varying the amount of voltage applied to the gate terminal, it is possible to control the amount of current flowing through the transistor.
FQP630TSTU transistors are also capable of providing high-current output, making them suitable for a range of switching applications. They are able to operate at higher temperatures than other FETs, making them appropriate for high temperature applications, such as power supplies. Furthermore, FQP630TSTU transistors are capable of providing improved efficiency, as well as improved physical characteristics, making them a desirable choice for many applications.
The FQP630TSTU is a popular choice for many digital switching applications, due to its low on-state resistance, low capacitance and low switching loss. It is also capable of providing high immunity to electrical noise, making it an ideal choice for applications that require high reliability and low noise. Its wide range of specifications make it suitable for applications such as audio amplifiers, power converters and digital logic.
The FQP630TSTU is also suitable for applications that require high reliability and low distortion levels. Its low power consumption also makes it attractive to suppliers and manufacturers who are looking to reduce their costs. As such, this FET is ideal for portable electronic devices, as it can offer the right combination of performance, reliability and cost-effectiveness.
In conclusion, the FQP630TSTU is a popular choice for applications requiring low-power and low noise operation. Its wide range of specifications and its ability to withstand high temperatures and pressures makes it an attractive choice for a variety of applications, from computer logic and sensitive switching, to audio amplifiers, power supplies and driver circuit applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQP6N50C | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60C_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40CF | ON Semicondu... | -- | 785 | MOSFET N-CH 400V 6A TO-22... |
FQP6N90C | ON Semicondu... | -- | 995 | MOSFET N-CH 900V 6A TO-22... |
FQP65N06 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 65A TO-22... |
FQP6N15 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 6.4A TO-... |
FQP630TSTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP630 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP6N25 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 5.5A TO-... |
FQP6P25 | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 6A TO-22... |
FQP6N50 | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A TO-... |
FQP6N80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 5.8A TO-... |
FQP6N90 | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 5.8A TO-... |
FQP6N80C | ON Semicondu... | -- | 870 | MOSFET N-CH 800V 5.5A TO-... |
FQP6N60C | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40C | ON Semicondu... | -- | 759 | MOSFET N-CH 400V 6A TO-22... |
FQP6N70 | ON Semicondu... | 0.92 $ | 1000 | MOSFET N-CH 700V 6.2A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...