FQP6N90

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The FQP6N90 is an Enhancement Mode Field Effect Transistor (FET) that belongs to the P6NF family. It is an N-channel FET and has a maximum drain voltage rating of 900V. It also has a very low drain-source on-state resistance, making it an ideal switch for high power applications.

The FQP6N90 has a 93A continuous drain current rating and a 600mA source current rating. It also has an on-resistance of 6.5 milliohms, making it a great choice for high efficiency switching applications. It has a voltage withstand rating of 20V, ensuring reliability and safety in its application. The FQP6N90 can operate over a wide temperature range of -55 to 150°C.

The FQP6N90 can be used in a variety of applications. It is most suitable for switching operations, as its on-resistance is very low and its voltage withstand rating is fairly high. It can also be used for power converters, DC-DC converters, motor control applications, and many other electronic circuits.

The working principle of FQP6N90 is based on the principle of operation of an Enhancement Mode Field Effect Transistor (FET). It works by using electric fields to control the flow of electric current through the device. In an N-channel FET, a positive voltage is applied to the source terminal and a negative voltage is applied to the drain. As a result, current begins to flow from the source to the drain as an electric field is created. This electric field causes the channel between the source and the drain to become wider, allowing more current to flow.

The gate terminal of the FQP6N90 is also charged, which further enhances the electric field. This electric field enables the flow of current from the source to the drain. The electric field also controls the resistance of the device, which can be adjusted to control the flow of current. By controlling the resistance, the FQP6N90 can be used to switch currents on and off, making it an ideal choice for high-power switching applications.

In conclusion, the FQP6N90 is an excellent choice for high-power switching applications. It has a low on-resistance and a high voltage withstand rating, which makes it an ideal switch for these applications. Additionally, it has a wide temperature range, making it suitable for many different applications. Finally, it operates based on the principle of operation of an Enhancement Mode FET, using electric fields to control the flow of current.

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