| Allicdata Part #: | FQP6N60C-ND |
| Manufacturer Part#: |
FQP6N60C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 5.5A TO-220 |
| More Detail: | N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO... |
| DataSheet: |  FQP6N60C Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The FQP6N60C MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a single high-power N-Channel MOSFET. It is a power transistor specifically designed for automotive and industrial applications and offers very high efficiency across all currents. Since the FQP6N60C is an N-type device, the gate voltage applied needs to be negative with respect to the source. The device has a low on-resistance and is designed to handle power levels up to 600V and currents in excess of 6A.
The FQP6N60C MOSFET works on the principle of field effect. In this principle, the electric field generated by adjacent metal-oxide insulator film gate and an electric gate voltage is used to control the current flow through it. The current flow is controlled by the amount of negative potential applied on the gate pin. The drain voltage and source voltage are used to measure the current level.The FQP6N60C has a reliable and efficient P-channel MOSFET architecture with a low on-resistance for improved thermal characteristics. It also has balanced gate capacitances and low input capacitance, making it an ideal device for a wide range of applications and power supplies.
The FQP6N60C MOSFET can be used for various automotive and industrial applications such as SMPS (switched mode power supply), AC-DC converters, high-speed motor control, power supplies, DC-DC converters, motor speed control, motor driver circuits and industrial applications. Due to its low-resistance operation, it can be used in brushed and brushless DC motor control. It is also widely used in high-power switching circuits because of its better drain-source breakdown voltage and drain current ratings.
The low-resistance characteristics of the FQP6N60C make it perfect for power amplifier applications. It can be used in audio amplifiers, sound systems and guitar amplifiers. It also offers improved thermal characteristics and can be used in high-power switching applications for improved efficiency. Additionally, it is also an ideal device for temperature sensing, voltage regulation and control in a wide range of industrial applications.
Aside from automotive and industrial applications, the FQP6N60C MOSFET can also be used in several consumer electronics applications. It is often used in LCD and plasma displays, smartphones, laptops, digital cameras, portable DVD players and digital televisions. The device can be used to switch large currents with accurate control, increasing the power efficiency in consumer electronics.
The FQP6N60C MOSFET is a reliable and efficient high-power N-Channel device. It has a low on-resistance and is designed to handle power levels up to 600V and currents in excess of 6A. The MOSFET double-diffused structure offers balanced gate capacitances and low input capacitance, making it an ideal device for a wide range of automotive and industrial applications. It is also widely used in consumer electronics applications due to its ability to switch large currents accurately.
The specific data is subject to PDF, and the above content is for reference
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