Allicdata Part #: | FQP6N50-ND |
Manufacturer Part#: |
FQP6N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5.5A TO-220 |
More Detail: | N-Channel 500V 5.5A (Tc) 98W (Tc) Through Hole TO-... |
DataSheet: | FQP6N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 98W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP6N50 is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which is specifically designed for power management and switching applications. The FQP6N50 is designed to offer high speed switching actions with low on-resistance, allowing it to maintain high efficiency while ensuring high-reliability, even in hostile environments. As with all FETs, the FQP6N50 is a "single" device and is not part of an integrated circuit.
The FQP6N50 is composed of two different parts: a source region and a drain region. The source region is the area where current flows from the device into the circuit, while the drain region is the area where current flow is taken from the circuit and terminated. The source and drain regions are separated by a thin layer of insulating material called the gate oxide, which determines the resistance between the two regions. The resistance is determined by the amount of voltage applied to the gate; this voltage is known as "gate voltage bias" and is how the device is controlled.
The FQP6N50 is used in a wide range of power management and switching applications. It is commonly used in power supply circuits, as it can efficiently convert electrical energy into a usable form. It has also found applications in automotive, lighting, and consumer electronics industries. The FQP6N50 can be used as a power pass device or as a switch, depending on the desired application.
The FQP6N50 works by the application of an electric field between the source and the drain regions, causing a change in the resistance between them. This change in resistance is what allows current to pass between the two regions and is controlled by changing the voltage applied to the gate. This is known as the "gate voltage bias". When the gate voltage bias is set to a high voltage, the FQP6N50 behaves like a switch, allowing current to pass. When the bias is set to a low voltage, the FQP6N50 behaves like a resistor, preventing current flow.
The FQP6N50 is an extremely reliable and efficient device, making it an excellent choice for power management and switching applications. Its high speed switching actions and low on-resistance help ensure that power is converted and used efficiently, allowing it to be used in a variety of environments. As a single device, the FQP6N50 is easy to use and requires minimal maintenance and servicing. Its long life-expectancy and high reliability make it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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