Allicdata Part #: | FQP6N80C-ND |
Manufacturer Part#: |
FQP6N80C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 5.5A TO-220 |
More Detail: | N-Channel 800V 5.5A (Tc) 158W (Tc) Through Hole TO... |
DataSheet: | FQP6N80C Datasheet/PDF |
Quantity: | 870 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 158W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQP6N80C is a N-channel, high-speed, low-power, TO-220 package power MOSFET designed for use in switching applications. It has a maximum drain-source voltage up to 80V and can handle up to 20A. It offers low resistance and performance over a wide temperature range. The FQP6N80C is a great choice for applications such as converters, non-isolated switching current converters, battery charging, high voltage protection, and high frequency power supplies. It is also suitable for many other applications including audio amplifiers, power switching, motor control, and DC-DC converters.
The FQP6N80C is a power MOSFET which is short for metal-oxide-semiconductor field-effect transistor. It is a transistor-like device that can be used to both amplify a signal, as well as switch it on and off. It operates on the principle of electric field control and gate-controlled switch. A MOSFET has three terminals, namely, gate, drain and source. Applying a voltage to the gate terminal can create an Electric field which influences the conductivity between the drain and source terminals.
The FQP6N80C offers many advantages to users. It’s low gate resistance allows it to switch at comparatively low voltages. This allows for a wider range of control. It is also able to switch relatively quickly, making it appropriate for many high frequency applications. Furthermore, due to its small size, the FQP6N80C is suitable for applications with limited space requirements. Due to its low on-resistance, it also has low power dissipation which allows it to be used in high power applications.
In order to use the FQP6N80C in applications, users need to pay close attention to different aspects. One of the most important things to consider is the maximum voltage rating, which must not be exceeded. It is also important to select a suitable gate driver in order to drive the MOSFET properly. Finally, MOSFETs also require some form of heat dissipation which can be solved by adding a heat sink or other form of cooling device.
Overall, the FQP6N80C is a great choice for many switching applications. It offers a combination of low on-resistance, high switching speed and low power dissipation. It can be used in a wide variety of power switching applications, such as DC-DC converters, battery charging, and audio amplifiers. It should be noted, however, that proper selection and heat management is necessary in order to obtain the maximum performance of the FQP6N80C.
The specific data is subject to PDF, and the above content is for reference
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