| Allicdata Part #: | FQP6N25-ND |
| Manufacturer Part#: |
FQP6N25 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 5.5A TO-220 |
| More Detail: | N-Channel 250V 5.5A (Tc) 63W (Tc) Through Hole TO-... |
| DataSheet: |  FQP6N25 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 63W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The FQP6N25 is an enhancement-mode vertical power MOSFET (metal oxide semiconductor field effect transistor) available in TO-220AB package. It is optimized for switching applications due to its low on-resistance and fast switching time. The FQP6N25 MOSFET have a low gate-source threshold voltage and its low gate impedance offers an effective means of reducing EMI (electromagnetic interference) in switching applications.
The FQP6N25 is a single P-Channel MOSFET which can be used as an electronic switch designed to handle moderate power loads. It features a small gate-source capacitance which contributes to a fast switching performance. Furthermore, it has a low parasitic gate charge, which reduces gate drive power requirements.The FQP6N25 is particularly useful for switching loads in applications where its high performance is advantageous. The FQP6N25 is especially suited for switching load in applications such as power conversion, computer peripherals, automotive systems and motor control.
Due to its low on-resistance and fast switching time, the FQP6N25 has become increasingly popular in current-mode control techniques, such as those found in switched-mode power supplies. The low on-resistance of the device, combined with its fast switching time, make it a good choice for suppressing EMI. The low gate-source threshold voltage also enables easy control of the FQP6N25 with a switching signal.
The FQP6N25 works as an electronic switch to control the flow of current from the source to the drain. Its gate input is connected to a logic signal which controls the flow of current through the device. When the logic signal is low, the device is deactivated, and current does not flow. When the logic signal is high, the FQP6N25 is activated, and current flows from the source to the drain.
The FQP6N25 is a versatile device that can be used in a variety of applications. Its low on-resistance and fast switching time make it an excellent choice for switching applications. In addition, its low gate-source threshold voltage and low parasitic gate charge enable easy control and reduce gate drive power requirements. The FQP6N25 is particularly useful for switching loads in applications such as power conversion, computer peripherals, automotive systems and motor control.
The specific data is subject to PDF, and the above content is for reference
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