Allicdata Part #: | FQP65N06FS-ND |
Manufacturer Part#: |
FQP65N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 65A TO-220 |
More Detail: | N-Channel 60V 65A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | FQP65N06 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 32.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQP65N06 is a single N-channel enhancement mode Power Field Effect transistor (FET) manufactured by Fairchild Semiconductor. It is an insulated gate FET which is suitable for applications such as switching and linear amplifiers. This component is usually seen in AC-DC converters, motor and motion control, or protection circuits and has a maximum drain source breakdown voltage of 60 volts.
FETs are a type of transistor which utilizes a voltage charge to control the electric current passing through it. This means that FETs can be used as amplifiers, switches, or even in digital logic circuits. The FQP65N06 is an N-channel enhancement mode FET, meaning that the transistors\' source to drain is controlled by a voltage charge applied to the gate. In this type of FET, when the gate-source voltage is less than the threshold voltage, it blocks current, while when the voltage is greater than the threshold voltage, it allows current to pass. This FET can also switch between different logic levels, making it useful for digital signal transmission.
The FQP65N06 has a drain current maximum of 6.5 amps, drain source voltage of 60 volts, and maximum power dissipation of 44 watts. Its on-resistance can range from 0.060 ohms to 0.192 ohms, depending on drain current and drain-source voltage. It is also protected against gate-source voltage, drain-source voltage or drain-gate voltage surge current.
The FQP65N06 can be used for a variety of applications, including switching, linear amplifiers, and motor control. It can be used in AC-DC converters for the power supply of SMPSs or for solenoid and relay control. It is also useful in protection circuits, such as over-current or over-voltage protection. It is also used in logic circuits for signal transmission.
The FQP65N06\'s working principle is based on the voltage-controlled gate. As the gate-source voltage is increased above the threshold voltage, current starts to flow between the drain and source. The current can then be increased by increasing the gate-source voltage, and it will be reversed when the voltage falls below the threshold voltage. This FET is protected against current surge, which helps ensure reliable operation in a wide range of applications.
The FQP65N06 is a powerful, versatile component that can be used in a wide range of applications. Its low on-resistance, combined with its high drain-source voltage and maximum current rating, make it suitable for applications such as AC-DC converters, motor and motion control, and protection circuits. Additionally, its voltage-regulated gate and surge protection make it suitable for use in logic and digital signal transmission circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQP6N50C | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60C_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40CF | ON Semicondu... | -- | 785 | MOSFET N-CH 400V 6A TO-22... |
FQP6N90C | ON Semicondu... | -- | 995 | MOSFET N-CH 900V 6A TO-22... |
FQP65N06 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 65A TO-22... |
FQP6N15 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 150V 6.4A TO-... |
FQP630TSTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP630 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 9A TO-22... |
FQP6N25 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 5.5A TO-... |
FQP6P25 | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 6A TO-22... |
FQP6N50 | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 5.5A TO-... |
FQP6N60 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A TO-... |
FQP6N80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 5.8A TO-... |
FQP6N90 | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 5.8A TO-... |
FQP6N80C | ON Semicondu... | -- | 870 | MOSFET N-CH 800V 5.5A TO-... |
FQP6N60C | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 5.5A TO-... |
FQP6N40C | ON Semicondu... | -- | 759 | MOSFET N-CH 400V 6A TO-22... |
FQP6N70 | ON Semicondu... | 0.92 $ | 1000 | MOSFET N-CH 700V 6.2A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...