FQP6N15

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The FQP6N15 is a single-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for commercial applications. It is a low-power transistor often used to switch low voltage/low current applications such as digital logic circuits. The FQP6N15 is designed for a variety of commercial applications, such as consumer electronics and personal computing equipment. The FQP6N15 is a P-channel MOSFET, meaning the channel is formed by reverse-biasing the source-drain junction with a positive voltage, allowing an increased current flow between source and drain.

The FQP6N15 has an on state drain current of 5A, meaning it can handle a 5A load if the voltage applied is at least 9V. The maximum voltage it can handle is 20V, meaning that it can switch very high voltages, making it ideal for a variety of applications. It is also capable of handling a 10A load if the voltage is less than 9V. The MOSFET has an on-state resistance of 7.75 mΩ. This resistance is a measure of how well the FQP6N15 conducts while in the on-state. The lower the on-state resistance, the better the channnel conducts.

The FQP6N15 has a maximum power dissipation rating of 60W, meaning it can handle a maximum power rating of 60W. This makes it ideal for high power applications such as power motors and power switching equipment. The FQP6N15 also has a maximum safe operating temperature of 150°C, making it suitable for applications that require high thermal stability.

The FQP6N15 is an enhancement mode MOSFET, meaning it is turned on by applying an externally applied voltage and turning off by removing the same voltage. This makes it easy to control on/off operations and makes it useful for gate control applications. The FQP6N15 also has a low gate charge, making it easier to control the gate voltage and allowing faster switching speeds. The low gate charge means that the MOSFET can switch much faster than other types of transistors.

In summary, the FQP6N15 is a single-channel P-channel MOSFET that is an ideal choice for low voltage/low current, high power and high thermal stability applications. Its ability to switch very high voltages, high current ratings, fast switching speeds and low gate charge makes it a very versatile and useful transistor for commercial applications.

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