FQP6N80

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The FQP6N80 is part of a series of power metal-oxide-semiconductor field-effect transistors (MOSFETs) designed and manufactured by Fairchild Semiconductor. It is classified as single-ended, P-type, N-channel MOSFET. The FQP6N80 and its successor, the FQP6P80, were initially designed for use as switches and protection components in low-voltage, low-current, power management applications.

The FQP6N80 features a high-voltage (80 V) threshold voltage, making it suitable for power switching and protection applications in low-voltage, low-current systems. Its high current handling capability (11 A) makes it suitable for loads such as motors and lighting, as well as for battery supplies and power supplies. The FQP6N80 is typically used as a replacement for bipolar transistors, due to its superior switching characteristics and improved noise immunity.

The FQP6N80 is built using a power MOSFET process that achieves superior performance for fast switching applications. It contains a single N-channel enhancement-mode device that utilizes super-junction technology to reduce power loss and optimize power system efficiency. This technology combines a medium voltage doping profile with an etched layout that allows for a higher current-carrying capacity than traditional MOSFETs.

The FQP6N80 features a low internal gate-to-source capacitance and threshold voltage (VT) that allows for fast switching times. This allows the FQP6N80 to switch at higher frequencies without sacrificing the power efficiency or voltage protection capabilities of the MOSFET. The FQP6N80 also features a low internal source-to-drain capacitance that reduces power losses in the MOSFET.

The FQP6N80 enables designers to build power systems that have fast switching capabilities and excellent power efficiency. This makes it a versatile solution for a variety of applications, such as motor control and lighting. The FQP6N80 also provides protection against over-current situations, making it a great choice for power systems that require high current handling capabilities.

The FQP6N80 is part of a high-performance series of MOSFETs designed and manufactured by Fairchild Semiconductor. It provides a versatile power switching and protection solution for a variety of low-voltage, low-current applications. The FQP6N80 features a high-voltage threshold voltage, high current handling capability, low internal gate-to-source capacitance and threshold voltage, and low internal source-to-drain capacitance.

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