Allicdata Part #: | FQP6N60C_F080-ND |
Manufacturer Part#: |
FQP6N60C_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 5.5A TO-220 |
More Detail: | N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO... |
DataSheet: | FQP6N60C_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Package / Case: | TO-220-3 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
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The FQP6N60C_F080 is a single N-Channel Field Effect Transistor, otherwise known as an FET or a MOSFET, making it a necessary component in many electronic circuits. This transistor can handle a continuous current of up to 6 A and a peak, or transient, current of up to 10 A. It also has a drain-source voltage of up to 600 volts and a drain-gate voltage of up to 320 volts. Additionally, it has a fast switching speed and can be driven by a PWM signal. The FQP6N60C_F080 has a very low on-resistance, which effectively minimizes conduction losses.
The FQP6N60C_F080 is typically used in circuits requiring switching power transistors with high current ratings and low on-resistance values. These types of circuits are commonly employed in power supplies, uninterruptable power supplies, electric motor speed control, inverters, welders, lighting control, and robotics. The FQP6N60C_F080 is also popular in audio amplifiers, instrumentation, and high voltage and current applications. The FQP6N60C_F080 transistor is available in through-hole, as well as in several surface mount versions.
The FQP6N60C_F080\'s primary function is to allow an electrical current to flow from one place to another, but only when a suitable voltage is applied to the gate. When the gate is not energized, the transistor will block current flow, effectively acting as an open switch. This is the primary principle behind the use of FETs, and it is the reason they have become such widely used components in electronic circuits.
FETs such as the FQP6N60C_F080 are used in applications requiring devices with high capacitance, low impedance, and low power consumption. FETs are also well-suited for applications requiring devices with high input impedance, low input bias currents, and fast switching speeds. These types of characteristics make the FQP6N60C_F080 particularly well-suited for applications in power control, audio amplifiers, and other applications requiring high levels of performance and reliability.
The FQP6N60C_F080\'s relatively low on-resistance also helps to reduce wasted energy. By using the FQP6N60C_F080, the power consumption in a circuit can be lowered significantly, since it requires less voltage to flow through it. This feature helps to reduce the overall cost of operation, since it reduces the amount of energy that is wasted in the form of heat. Additionally, the reduced power consumption of the FQP6N60C_F080 is highly beneficial in both battery-operated and green energy devices.
In summary, the FQP6N60C_F080 is a single N-Channel FET which is used in many electronic applications. It has a very low on-resistance which makes it a great choice for high current devices such as power supplies, uninterruptable power supplies, and electric motor speed control devices. Additionally, its low power consumption and fast switching speed make it a popular choice for audio amplifiers and instrumentation applications. Finally, its high input impedance and low input bias current are useful for applications requiring high levels of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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