FQP6N60

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The FQP6N60 is one of a newer range of MOSFETs that features improved performance and features over its predecessors. The FQP6N60 is a 60V N-channel enhancement-mode Field-Effect Transistor (FET) with excellent on-state resistance, fast switching and low gate-charge. This makes it ideal for a wide range of applications, from power supplies and motor controllers to switching regulator applications.

The FQP6N60 is a standard metal-oxide semiconductor field-effect transistor (MOSFET) designed to switch high currents with very low power losses. It has an N-channel type construction, which means it is an electric current that flows through a channel when an voltage is applied to the gate. The FQP6N60 is a typical enhancement-mode transistor which means that it requires a positive or high voltage applied to its gate in order to turn it on and carry current through its drain and source terminals.

The FQP6N60 has a low threshold voltage of only 1.4V, which is great for low voltage applications, and a low on-resistance of rated 6.0mOhms at 10V Vgs, which makes it very efficient in converting electrical energy into another form. Its body-diode for this device is rated for a maximum of 1A and it is also suitable for high switching frequency applications. The FQP6N60 has an operating temperature range of -55°C to 150°C and is available in three different packages: SOT-223, D2PAK, and TO-220.

When it comes to designing with the FQP6N60, there are a few things to keep in mind. The FQP6N60 has a maximum drain current of 9A, which means it is limited to a certain amount of power output. In addition, this transistor has a gate-source voltage range of -2V to 15V, which means that it may only be used in applications that use a range of gate-source voltages within this range. As with any transistor, it is important to pay attention to the package size, thermal characteristics and gate capacitance when designing with this device.

The FQP6N60 has a wide range of applications, from simple switching to power management solutions. It is ideal for motor controls, power supplies, and power conditioning applications due to its low gate-charge and low on-resistance. It is also suitable for high power switching applications, such as DC-DC converters and power MOSFET inverters. In addition, the FQP6N60 can be used in a variety of other applications as its fast switching speed and low threshold voltage make it suitable for low voltage applications.

In conclusion, the FQP6N60 is a 60V N-channel enhancement-mode FET with excellent on-state resistance, fast switching and low gate-charge that is ideal for a wide range of applications. It has a low threshold voltage, low on-resistance, and a maximum drain current of 9A, and is available in three different packages. The FQP6N60 is suitable for motor control, power supplies, power conditioning, DC-DC converters, and other high power switching applications due to its fast switching speed and low threshold voltage.

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