IPP041N12N3GXKSA1 Allicdata Electronics
Allicdata Part #:

IPP041N12N3GXKSA1-ND

Manufacturer Part#:

IPP041N12N3GXKSA1

Price: $ 4.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 120V 120A TO220-3
More Detail: N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG...
DataSheet: IPP041N12N3GXKSA1 datasheetIPP041N12N3GXKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 4.27140
10 +: $ 3.81402
100 +: $ 3.12757
500 +: $ 2.53259
1000 +: $ 2.13592
Stock 1000Can Ship Immediately
$ 4.7
Specifications
Vgs(th) (Max) @ Id: 4V @ 270µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 120V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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As one of the most widely used power semiconductor components, the IPP041N12N3GXKSA1 is popular for its high efficiency, low-cost, and high-reliability. The IPP041N12N3GXKSA1 is a single N-channel MOSFET with a breakdown voltage of 1200 Vabs and a maximum onstate resistance of 41 mOhms. It is widely used in various fields, including consumer electronics, aerospace, automotive, and power applications. In this article, we\'ll discuss the application fields and working principle of the IPP041N12N3GXKSA1.

The IPP041N12N3GXKSA1 is a versatile, easy to use, highly reliable and efficient MOSFET. It is often used in high power switching applications, such as motor drives, variable speed drives, and inverters. This MOSFET can also be used in application fields such as lighting controls, solar energy solutions, laser applications, and medical devices. In addition, the IPP041N12N3GXKSA1 is often used in automotive applications, such as powertrain related systems, fuel systems, safety modules, and brake systems.

The working principle of the IPP041N12N3GXKSA1 is quite simple. It is a type of field effect transistor that utilizes the electric field generated by a voltage applied between two terminals (Gate and Drain) to control the current or voltage between two other terminals (Source and Drain). When a voltage is applied between the Gate and Drain terminals, this creates a strong electric field which can attract or repel the electrons to form a conductive path between the Source and Drain terminals. The IPP041N12N3GXKSA1 can be used to control the voltage and current between the Source and Drain terminals in a complete range of states, from completely off to completely on.

The IPP041N12N3GXKSA1 is a robust device with a low on-state resistance that is suitable for a variety of applications. It is a great choice for power switching applications such as motor drives, variable speed drives, and inverters. Its high breakdown voltage makes it ideal for applications requiring high voltage handling capabilities, such as powertrain related systems, laser systems, and medical systems. Additionally, its high efficiency and low-cost make it an attractive option for many applications.

In conclusion, the IPP041N12N3GXKSA1 is a versatile, efficient and cost-effective power semiconductor component. It is commonly used in a range of applications, including motor drives, variable speed drives, and inverters. Additionally, it is suitable for powertrain related systems, fuel systems, safety modules, and brake systems. Finally, its high breakdown voltage, high efficiency, and low-cost make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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