IPP06CN10NGXKSA1 Allicdata Electronics
Allicdata Part #:

IPP06CN10NGXKSA1-ND

Manufacturer Part#:

IPP06CN10NGXKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 100A TO-220
More Detail: N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG...
DataSheet: IPP06CN10NGXKSA1 datasheetIPP06CN10NGXKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 180µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP06CN10NGXKSA1 transistor is a single monolithic insulated gate field effect transistor (IGFET). It is designed for use in high performance surface-mount applications which require low gate charge, low on-resistance, high gain, low leakage and low noise. This FET is ideal for switching, linear control, low-frequency circuit design, power supply design, Class D amplifierand pulse systems.

Working Principle of IPP06CN10NGXKSA1

The principle of insulation gate field effect transistors is that they use electric fields to control the conductivity of a semiconductor channel. The conductivity is determined by the strength of the electric field, and it is controlled using a metal gate electrode on the top of the semiconductor. When a voltage difference is applied between the metal gate and the semiconductor material, electrons are either repelled or attracted to the surface of the semiconductor, allowing for current to pass through the gate and channel.

At low voltages, the electric field is fairly weak, resulting in a low conduction of current through the channel. At higher voltages, the electric field is stronger, resulting in a higher conducitivity of current.

The IPP06CN10NGXKSA1 has a low input capacitance, low drain-source on-resistance, low power dissipation and low gate-source leakage. It also has a high gate-source breakdown voltage and low output capacitance. It is widely used in design with high switching speed, high frequency and high power applications.

Applications of IPP06CN10NGXKSA1

The IPP06CN10NGXKSA1 is suitable for applications that require low gate charge, low on-resistance, high gain, low leakage and low noise. It has a wide range of applications such as low-frequency circuits design, power supply design, switching, linear control, Class D amplifier and pulse systems.

This device is used in high power switching applications requiring low on-resistance, low capacitance and low leakage. It is also used as a driver device for high-current switching and modulation systems, for uni-polar motor control and for motor braking systems. It is suitable for use in computing and communication systems, consumer electronics, medical equipment, automotive electronics and industrial machinery.

The IPP06CN10NGXKSA1 is also used in linear applications such as audio preamplifiers, power amplifiers and voltage regulators. It can be used as a power line detector, as a precision current-programmable device and as a digital to analog converter.

The IPP06CN10NGXKSA1 has low noise and high accuracy, making it ideal for use in high-speed applications such as digital signal processing, disk drives and digital television. It is also used in high speed amplifiers for signal integrity, for signal procession and for uniform power devices.

Conclusion

The IPP06CN10NGXKSA1 device is a single-channel insulated gate field effect transistor (IGFET). It is an ideal device for high performance applications that require low gate charge, low on-resistance, high gain, low leakage and low noise. It has a wide range of applications in low-frequency design, power supply design, switching, linear control, Class D amplifier and pulse systems. It also has applications in high power switching, audio preamplification, power amplifiers, voltage regulator, power line detector, precision current programmable device and digital to analog conversion.

The specific data is subject to PDF, and the above content is for reference

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