Allicdata Part #: | IPP076N12N3GXKSA1-ND |
Manufacturer Part#: |
IPP076N12N3GXKSA1 |
Price: | $ 2.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 120V 100A TO220-3 |
More Detail: | N-Channel 120V 100A (Tc) 188W (Tc) Through Hole PG... |
DataSheet: | IPP076N12N3GXKSA1 Datasheet/PDF |
Quantity: | 350 |
1 +: | $ 2.04750 |
10 +: | $ 1.83015 |
100 +: | $ 1.50066 |
500 +: | $ 1.21518 |
1000 +: | $ 1.02485 |
Vgs(th) (Max) @ Id: | 4V @ 130µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 188W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6640pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 101nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.6 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IPP076N12N3GXKSA1 is a Good-China 3-phase gate driver IC, specifically designed for driving high voltage, high current N-channel MOSFETs and IGBTs in PFC and LLC resonant converter applications. It integrates the logic level MOSFET gate driver and the high voltage, high current MOSFET gate driver in a single package. This makes it ideal for driving high current applications operating at low frequencies. It has high efficiency, low power consumption and low on-state resistance.
Application Field
IPP076N12N3GXKSA1 is mainly used in low-frequency high-current switching power supply applications, such as PFC (Power Factor Correction) and LLC (Low-Loss Resonant) solutions. It has excellent gate driving capability for N-channel MOSFETs and IGBTs in both single-ended and redundant configurations. It also supports pulsed current mode control and has adjustable soft-start current limiting functions.
The MOSFET driver IC can also be used in other power supply applications such as DC/DC converters and AC/DC converters. It has adjustable deadtime control and multiple PWM frequency ranges for optimized switching performance.
Working Principle
IPP076N12N3GXKSA1 is a single-channel MOSFET driver integrated circuit that uses digital signals as input and provides a high-voltage drive to the gate of the load MOSFETs through its built-in MOSFET driver. It has a built-in startup circuit and current limiting resistor network, providing a PWM control signal to the drain of the load MOSFETs. The drive level at the gate of the MOSFETs is adjustable by changing the input voltage of the startup circuit, and the on-state resistance of the MOSFETs is also adjustable by changing the current limiting resistor network.
The driver circuit also has a power switch, which controls the output frequency of the switching power supply. The switching frequency can be adjusted by changing the input voltage of the power switch. This can provide better system control and improved efficiency. The power switch also protects the IC from over temperature and over current conditions.
Conclusion
The IPP076N12N3GXKSA1 is a single-channel MOSFET driver integrated circuit that combines the logic level MOSFET driver and the high voltage, high current MOSFET driver in a single package. It is mainly used in low-frequency, high-current switching power supply applications like PFC and LLC solutions. It has excellent gate driving capability for N-channel MOSFETs and IGBTs and adjustable deadtime control and multiple PWM frequency ranges for optimized switching performance. The internal startup circuit and current limiting resistor network provide good protection and system control.
The specific data is subject to PDF, and the above content is for reference
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