IPP093N06N3GHKSA1 Allicdata Electronics
Allicdata Part #:

IPP093N06N3GHKSA1-ND

Manufacturer Part#:

IPP093N06N3GHKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 50A TO220-3
More Detail: N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO...
DataSheet: IPP093N06N3GHKSA1 datasheetIPP093N06N3GHKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 34µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPP093N06N3GHKSA1 is an n-channel enhancement mode field-effect transistor (FET). It is designed specifically for Higher switching speed operation and very low on-resistance over a wide power supply range. It is available in an SO-8 package, making it a perfect semiconductor for high-density, pin-limited applications. The transistor enables a superior efficiency over ordinary FETs as it offers low on-resistance and very low capacitance, making it efficient for a broad range of low voltage, power supply applications.

The working principle behind the IPP093N06N3GHKSA1 is based on the junction between p-doped and n-doped layers of semiconductive material. This produces a field that can modulate the strength of an electrical current by a depletion mode. With a larger field strength, current is reduced; and when the field strength decreases, current is increased. As a result, the strength of current passing through the transistor can be manipulated by controlling the amount of voltage applied.

This transistor is typically used in switching applications. By reversing the polarity of the voltage on the gate, the transistor allows current to be switched on or off. Using a very low on-resistance, the transistor can provide higher switching speeds, resulting in improved system performance, reduced system power and longer battery life. Furthermore, the superior efficiency of the device makes it ideal for applications where power consumption is a critical factor.

The IPP093N06N3GHKSA1 transistor is an ideal choice for many switching applications, including switches for DC and AC power, as well as for audio, home automation and security. Additionally, it is well suited for automotive applications, where it is used for controlling power and for switching on/off motors and relays. It is also used in medium and high power switching applications such as high voltage DC-DC converters and high-speed, low-power switch-mode amplifiers.

The IPP093N06N3GHKSA1 is a single FET transistor that can be used to efficiently control the amount of current passing through it. It offers low on-resistance over a wide power supply range and superior efficiency that makes it ideal for applications where power consumption is an important factor. As a result, it is an ideal choice for many switching, audio, home automation, security, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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