IPP05N03LB G

Vgs(th) (Max) @ Id:	2V @ 40µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3209pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	5.3 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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。IntroductionThe IPP05N03LB G is a power Field Effect Transistor (FET) device designed for use in a variety of medium to high power applications. It is a single-die transistor that utilizes a semiconductor substrate and a variety of packaging materials to effectively protect the internal semiconductor devices while still providing the necessary performance characteristics and power handling capabilities. This device has a high insulation resistivity (IR value), as well as a low thermal resistance, making it ideal for medium to high power applications.Application FieldThe IPP05N03LB G is a power Field Effect Transistor (FET) device designed for high power applications. It is suitable for applications such as fan motors, light ballasts, White goods, power supplies, brushless DC motors and power modules. It has various features such as very low gate charge, very low capacitance and very high break down voltages, making it ideal for use in switch mode power supplies and other high power applications.FeaturesThe IPP05N03LB G is a power Field Effect Transistor (FET) device designed for high power applications. It is designed with some key features to enable it to meet the demands of higher power applications. These features include a low gate charge, low inter-electrode capacitance, very low resistance, and extremely high breakdown voltage. Furthermore, the device is designed to provide high temperature resistance, wide noise immunity and low thermal resistance. All of these features make it suitable for use in power modules, switch mode power supplies and other fields requiring higher power device performance.Working PrincipleThe working principle of the IPP05N03LB G is based on the basic principle of field effect transistors (FETs): an electric field is established between the source and drain terminals, and this field can be used to control the current flowing through the transistor. A small voltage applied to the gate control terminal of the FET is used to determine the threshold voltage of the FET, and the amount of current flowing through the FET is determined by the magnitude of the applied voltage. When the voltage between the source and drain is greater than the threshold voltage, the FET is said to be in the \'on\' state, and the current flowing through it can be increased. Conversely, when the voltage applied at the gate terminal is less than the threshold voltage, the FET is in the \'off\' state, and the current flowing through it is negligible. This allows the user to control the amount of current flowing through the device, and therefore the power output of the device. ConclusionThe IPP05N03LB G is a single-die power Field Effect Transistor (FET) designed for medium to high power applications such as fan motors, light ballasts, White goods, power supplies and brushless DC motors. Its features make it suitable for use in high power applications, and its working principle is based on the same principles as other FET devices, with the applied voltage at the gate terminal determining the threshold voltage and thus, the amount of current flowing through it.

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