Allicdata Part #: | IPP04N03LAIN-ND |
Manufacturer Part#: |
IPP04N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 80A TO-220AB |
More Detail: | N-Channel 25V 80A (Tc) 107W (Tc) Through Hole PG-T... |
DataSheet: | IPP04N03LA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 60µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3877pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP04N03LA is a type of single, field-effect transistor (FET) belonging to the Metal Oxide Semiconductor FET (MOSFET) family. It is a lower gate voltage, high peak current and low on voltage product, suitable for a wide range of applications including power switching, motor control and high efficiency power conversion. This paper will discuss the application fields and working principles of the IPP04N03LA device.
The IPP04N03LA device is most suitable for use in applications where high peak current, low on voltage, reduced gate voltage and low losses are required. Typical application fields for this device include motor control, power switching and high efficiency power conversion. The device has a low threshold voltage of 2V, making it especially suitable for motor speed and current control, as well as for high efficiencies in solar photovoltaic and DC/DC power systems.
In addition to its application fields, the IPP04N03LA device has several features which contribute to it functioning effectively and efficiently. Its very low on-resistance of 0.6 Ohms allows the device to handle large currents while achieving high system efficiency. The device also has excellent temperature stability, making it suitable for even tough industrial environments. Other features of the IPP04N03LA device include low power losses, an exposed pad on the back side of the case which enhances the thermal performance and, finally, good noise immunity.
Now, let\'s delve deeper into how this device works. The IPP04N03LA is a MOSFET - a type of field-effect transistor consisting of a source, a drain and a gate, between which a thin layer of metal oxide is present. This layer acts as an electrically insulator between the gate and the source and drain, and creates a channel through which the current is allowed to flow when the gate is given a certain voltage. The voltage required to create this channel, known as the threshold voltage, is very low for the IPP04N03LA, which helps reduce power losses and improves efficiency. Additionally, the channel is easily maintained once created, making it ideal for applications where high peak current is required.
In summary, the IPP04N03LA is a single, field-effect transistor device which is suitable for a variety of applications including motor control, power switching, and high efficiency power conversion. Its features, including its low threshold voltage, low on-resistance, good thermal performance and noise immunity, help make it an ideal choice for such applications. Its working principle revolves around creating a channel between the source and drain, through which the current is allowed to flow when the gate is given a certain voltage.
The specific data is subject to PDF, and the above content is for reference
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IPP05N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A TO-22... |
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IPP06CN10N G | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 100A TO-... |
IPP06CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 100A TO-2... |
IPP070N06L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO-22... |
IPP070N06N G | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 80A TO-22... |
IPP07N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TO-22... |
IPP080N06N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO-22... |
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IPP08CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 95A TO-22... |
IPP03N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 80A TO-22... |
IPP09N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A TO-22... |
IPP05N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A TO-22... |
IPP06N03LA | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A TO-22... |
IPP04N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 80A TO-22... |
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