IPP076N15N5AKSA1

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The IPP076N15N5AKSA1, also known as the International Rectifier (IR) High Voltage N Channel MOSFET, is a high performance and efficient silicon MOSFET device. It is designed to be used in power supplies, motor control, high frequency switching applications and DC-DC converters. It has a typical RDS(on) rating of 0.0067 ohm, maximum gate-source voltage (Vgs) of 20V, gate-drain (Vgd) of 30V and drain-source (Vds) of 600V. It is available in TO-220 rectangular profile package.

This MOSFET is suitable for any application that requires high frequency switching, high level of efficiency and high temperature operation. It has a low threshold voltage (Vth) of 2.0V max, which makes it ideal for applications ranging from high voltage level shifters to low voltage level shifters. The maximum junction temperature rating of this device is 200°C, making it suitable for extreme high temperature application. The MOSFET has been designed to the industry leading AEC-254 environmental test protocol, making it reliable for long term operation in extreme conditions.

The working principle of the IPP076N15N5AKSA1 high voltage N Channel MOSFET is based on the MOSFET (metal-oxide-semiconductor field effect transistor) technology. It works by controlling a given amount of current through a drain-source channel under the influence of an applied gate voltage. When an external voltage is applied to the gate of the device, a shift of its threshold voltage (Vth) occurs. The higher the applied gate voltage, the greater the threshold voltage shift. This will cause a decrease in the source/drain resistance. As a result, the device acts as a switch and allows a current between the source and the drain with a minimum of power loss. Thus, this MOSFET allows us to handle high currents while dissipating very little power.

The versatility of the IPP076N15N5AKSA1 MOSFET makes it suitable for use in a variety of applications. It can be used in switched mode power supplies, motor control systems, high-frequency switching and DC-DC conversion as well as many other devices. It is particularly suitable for applications that involve high temperature operation due to its 200°C maximum junction temperature rating. Its low gate drive threshold voltage also makes it very useful in a wide range of level shifters.

The IPP076N15N5AKSA1 high voltage N Channel MOSFET is a versatile, efficient, and reliable high voltage MOSFET device. Its low gate drive threshold voltage and high temperature operation make it suitable for a range of applications from high voltage level shifters to low voltage level shifters. Moreover, its RDS(on) rating and high performance make it suitable for use in highly efficient power supplies and motor control systems. The industry leading AEC-254 environmental test protocol ensures long life and reliable operation.

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