| Allicdata Part #: | IPP04CN10NGXKSA1-ND |
| Manufacturer Part#: |
IPP04CN10NGXKSA1 |
| Price: | $ 2.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MV POWER MOS |
| More Detail: | |
| DataSheet: | IPP04CN10NGXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 2.58346 |
| Series: | * |
| Part Status: | Not For New Designs |
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The IPP04CN10NGXKSA1, otherwise known as “Industrial FET”, is a type of single-channel, insulated gate, field-effect transistor (IGFET or FET). Designed to be used in demanding industrial applications, it has the ability to protect against static electricity discharges, heat, and electric shock. In addition, it features a high operating temperature range and excellent electric performance characteristics.
The device is typically utilized in a variety of analog and digital circuits where large currents and voltages must be switched on and off. This includes circuits that involve control and power regulation, data communications, and cellular networking. The most common applications for the IPP04CN10NGXKSA1 include power grids and automotive systems. The FET is also sometimes employed in military and aerospace applications.
Since the IPP04CN10NGXKSA1 is an insulated gate FET, it works by using an electric field to control the conductive path between two terminals. When the gate voltage is higher than the voltage across the drain-source terminals, then current can flow freely through the drain-source path. However, when the gate voltage is lower than the drain-source voltage then the drain-source path is blocked and current is prevented from flowing through the circuit.
The IPP04CN10NGXKSA1 also features internal drain and source resistors, which are integrated components that can be used to help control the amount of power that is provided to the drain-source path. They also aid in improving the device’s overall efficiency. The FET has a maximum drain-source blocking voltage rating of 100V and a maximum drain-source current of 4A.
The IPP04CN10NGXKSA1 is packaged in an industry-standard SOT223 package, which makes it a widely accepted and used device in the industry. It is important to remember that the device should always be connected to proper ground in order to prevent unwanted electrical shocks and circuit malfunctions.
Due to its robust design and superior electrical performance characteristics, the IPP04CN10NGXKSA1 is a popular choice for industrial applications. It is capable of providing reliable performance with little to no maintenance or upkeep required. As a result, it is often used in high-voltage and high-reliability applications. The FET also features a low drain-source cutoff voltage, which means it can switch off when necessary in order to maintain the safe operation of any circuit.
Overall, the IPP04CN10NGXKSA1 is an effective and reliable FET. It has been designed for use in demanding industrial applications and its solid construction and superior electrical characteristics make it a perfect choice for a variety of applications. In addition, its internal drain and source resistors can be used to achieve greater power efficiency, making it an excellent choice for high-voltage and high-reliability applications.
The specific data is subject to PDF, and the above content is for reference
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| IPP080N06N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO-22... |
| IPP037N08N3GXKSA1 | Infineon Tec... | 1.98 $ | 1000 | MOSFET N-CH 80V 100A TO22... |
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IPP04CN10NGXKSA1 Datasheet/PDF