IPP08CNE8N G

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The IPP08CNE8N G is a power MOSFET with very low on-resistance in its regime of operation. It is great for high frequency and switching circuits as it provides an efficient electrical solution in the domain of power switch controlling. It is mainly used in PWM circuits with an optimal efficiency of 85% and is a flagship device belonging to the International Rectifier family.

The IPP08CNE8N G’s application field is quite wide and spreads to a variety of electronic appliances, such as motor drives, DC-DC converters, inverters and UPS systems, among others. Industrial automation components and automotive power modules are also part of the list of electronic appliances benefiting from the low on-resistance and improved power supply of the G-series MOSFET.

The working principle behind the G-series MOSFET is based on a simple PNM junction that mainly comprises a body, an insulated gate and a source-drain. When the source-drain voltage is low, the MOSFET conducting channel is turned off and the drain current drops. When it is turned on, a conducting channel is formed between the source and the drain terminals, thus allowing the flow of current.

The IPP08CNE8N G utilizes various techniques and provisions to keep the on-resistance as low as possible. Such methods include the reduction of Schottky diode, low-dynamic gate charge and greater current density. The maximum power dissipation of this device also varies, with 8A at 25 degrees Celsius (typical) and 10A at 40 degrees Celsius (maximum).

Furthermore, the IPP08CNE8N G includes an active-body-diode which is used to reduce the turn-on delay time. It also provides a reverse-blocking feature, which can prevent the stored charge from a hostile condition. In addition, the PNP topology helps to minimize the bulk capacitance of the switching nodes and to also reduce the total gate charge of the device.

To conclude, the IPP08CNE8N G is a power MOSFET is with a very low on-resistance. It is mainly used in PWM circuits and offers an efficient electrical solution in the domain of power switch controlling with a wide range of applications. Its working principle is based on a simple PNM junction and various techniques, such as the reduction of Schottky diode, low-dynamic gate charge and greater current density, are present to keep the on-resistance this MOSFET as low as possible.

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