Allicdata Part #: | IPP048N06LGIN-ND |
Manufacturer Part#: |
IPP048N06L G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 100A TO-220 |
More Detail: | N-Channel 60V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | IPP048N06L G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 270µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The ipp048n06lg is an enhancement-mode vertical DMOS power FET, also known as silicon carbide (SiC) MOSFET. It is designed for high-power, high-temperature applications where power efficiency and thermal dissipation are essential. It is a three-dimensional (3D) device that has a larger surface area for cooling than conventional DMOS FETs, enabling higher operating temperature and power density. The ipp048n06lg is suitable for AC/DC power conversion and motor control applications.
This FET has an enhance-mode threshold voltage Vth of -3V and an on-resistance RDS(on) of 0.86 mOhms. It is built with a commercial-grade chip that is highly optimized for high-power operation. The ipp048n06lg is capable of handling peak currents up to 2.4A, making it ideal for high-performance applications that demand power with minimal losses. It is also well suited for systems with on-chip isolation, such as a PFC (power factor correction) boost converter.
The ipp048n06lg is a switch mode device that can switch between the "on" and "off" states rapidly and efficiently. In the "on" state, the device allows current to flow freely, while in the "off" state, it blocks any current from flowing. The device is controlled by voltage, with the gate voltage being used to select the "on" or "off" state. The ipp048n06lg is an efficient device as it can switch quickly between the two states, allowing for highly efficient power transfer.
This FET also features low gate charge (Qg) values, allowing for faster operation when compared to other FETs with similar switching characteristics. To achieve the low gate charge, the ipp048n06lg has a broader gate structure, which increases the device\'s drain-source capacitance (Cds). This increased capacitance helps to improve the efficiency of the power conversion process, allowing for higher efficiency when compared to other FETs with lower drain-source capacitances.
The ipp048n06lg is a versatile device that can be used in many various applications, including AC/DC power conversion and motor control. It is a perfect choice for high-power applications where efficiency and thermal dissipation are essential. Additionally, the device is highly reliable, making it suitable for industrial applications, where reliability and performance are key.
The specific data is subject to PDF, and the above content is for reference
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