IPP039N04LGXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An IED (intelligent electronic device) is a modern technology that comprises of embedded software and microprocessors. It is now the most commonly used type of electronic device in many industrial and commercial control systems. The IEDs are used to control functions and processes, store and process data and maintain a balance in machines. These embedded systems are increasingly being used in the fields of power transmission and motors, automation, instrumentation, medical and communications. Here, we will be discussing the application field and working principles of IED, Ipp039n04lgxKSA1, which is a type of single-gate field-effect transistor (MOSFET).

Features of Ipp039n04lgxKSA1

This device has a total gate charge of 7.0nC and a total gate charge benchmark of 8.0 Qg, with a nominal drain-source resistance of 350Ω. The breakdown voltage of this device across a 100μm gap is 80V and the maximum voltage is 100V. The on-state resistance of this device is 59.2 mΩ. It is also IEC and UL certified. The package type used here is SuperSO-8 SC-70, with a total weight of 7.0g.

Application Fields for Ipp039n04lgxKSA1

The Ipp039n04lgxKSA1 is mainly used for power supply, DC-DC and amplifier applications. This device is designed for portable equipment, offering high efficiency and low voltage (<0.8V@2A) power supplies. This device can also be used for home equipment, providing noise control, medium current switching and protection against high voltage surges. This device is also suitable for automotive systems, offering high voltage and medium power performance.

Another application field for this device is in industrial automation and robotics, where it can be used for proximity sensing, controlling motors and as an amplifying and switching device. This device can also be used in gaming machines, as it offers superior performance and robustness in the switching of input signals.

Working Principles of Ipp039n04lgxKSA1

At the heart of the Ipp039n04lgxKSA1 is a single gate field-effect transistor (MOSFET). This means that the device acts as a voltage-controlled switch, allowing current to flow through its drain and source terminals when the gate voltage surpasses the threshold voltage. This mechanism also makes the device ideal for switching applications where low losses are required, as the power consumption is determined by the voltage difference between the gate and the source.

A key feature of the Ipp039n04lgxKSA1 is its on-state resistance (RDSon), which is the ratio between the drain current and the drain voltage when the device is in the fully-on state. This parameter is extremely important, as a lower RDSon value indicates that the device has a higher current capability, meaning that it can switch more current while still dissipating less power.

The device is also able to withstand a high breakdown voltage, as the drain-source voltage can reach up to 100V. This ensures that the device is able to operate safely at high voltages, ensuring reliable operation even under extreme conditions.

Finally, the package type used in this device offers superior thermal performance compared to other devices of the same size, meaning that it can dissipate heat more efficiently while still providing reliable switching performance.

Conclusion

In conclusion, the Ipp039n04lgxKSA1 is an ideal device for a wide variety of applications, from power supplies to automotive systems, as it offers superior performance and robustness, as well as the ability to withstand high voltages. The device is also able to dissipate heat more efficiently, allowing it to operate safely and reliably for long periods of time. With its wide range of features and applications, the Ipp039n04lgxKSA1 is the perfect choice for any project that requires low-voltage and high-current switching.

The specific data is subject to PDF, and the above content is for reference