Allicdata Part #: | IPP096N03LGIN-ND |
Manufacturer Part#: |
IPP096N03L G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A TO-220-3 |
More Detail: | N-Channel 30V 35A (Tc) 42W (Tc) Through Hole PG-TO... |
DataSheet: | IPP096N03L G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP096N03L G is a single-stage enhancement mode Field-Effect Transistor (FET) typically used in the high voltage performance. It has a high voltage drain-source breakdown of 600 Volts and can withstand an Avalanche of 50 Volts. This type of FET is often used in systems where high-voltage transistors are needed. The IPP096N03L G is also suitable for power applications such as lighting, automotive, and motor control, as well as applications that require high-side switching, such as protection circuits.
The IPP096N03L G is a Metal Oxide Semiconductor Field-effect Transistor (MOSFET). It is a voltage-controlled device that is used to switch electrical current through a load connected to its drain. The MOSFET is capable of both analog and digital transmission, making it a versatile component for a range of devices. It is typically used in applications such as power switching and amplifying due to its efficiency and low noise characteristics.
The working principle of the IPP096N03L G is relatively straightforward. The gate voltage of the device is used to control the amount of current that is allowed to pass through the drain and source terminals. When the gate voltage is low, not enough current can flow through the device. As the gate voltage increases, the resistance between the source and drain decreases, allowing more current to pass through the device. This can be used to control the output current of the device, making it a highly useful component in analog and digital circuits.
In addition to controlling the amount of current that is allowed to pass through the device, the IPP096N03L G can also be used to control its internal temperature. The device uses a heat sink to dissipate the heat generated when high currents pass through the device. This ensures that the device does not overheat and is capable of maintaining an optimum operation temperature.
The IPP096N03L G is a highly reliable and efficient device, making it an excellent choice for a range of applications requiring high-voltage and power performance. Its simple working principle and ability to control both the flow of current and internal temperature make it a versatile component for a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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