
Allicdata Part #: | IPP042N03LGXKSA1-ND |
Manufacturer Part#: |
IPP042N03LGXKSA1 |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 70A TO-220-3 |
More Detail: | N-Channel 30V 70A (Tc) 79W (Tc) Through Hole PG-TO... |
DataSheet: | ![]() |
Quantity: | 884 |
1 +: | $ 0.89460 |
50 +: | $ 0.71669 |
100 +: | $ 0.62710 |
500 +: | $ 0.48634 |
1000 +: | $ 0.38395 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPP042N03LGXKSA1 is a very versatile and popular insulated gate bipolar transistor, or IGBT, designed by Infineon Technologies. It is a high-power switching-type device, which can be used to convert electrical energy from a high-voltage to a lower one. It has essentially the same characteristics as a regular transistor, but with higher power efficiency, making it suitable for applications which require a lot of power.
This IGBT device is ideal for use in various power electronics applications such as motor control, automotive, home appliances, and renewable energy projects. It is capable of switching up to 40A at 900V, and has a low gate threshold voltage of 3V, meaning it can be easily switched on or off as required.
The IPP042N03LGXKSA1 has a number of features which make it highly useful for a wide range of applications. It has a high power density, allowing more power to be packed into a smaller device, while its high switching speed makes it ideal for motor control applications, where precise switching and control of power is required. Additionally, the device is designed with a low electromagnetic interference (EMI) rating, making it suitable for use in many noisy environments.
The working principle of the IPP042N03LGXKSA1 is based on a two-terminal voltage-controlled oscillator. The device consists of two insulated gate bipolar transistors (IGBTs) which have an electrostatic back-gate. A voltage is applied to the gate of one of the transistors, which causes an electric field to form, creating a channel between the source and drain. This channel can be controlled by varying the gate voltage.
The device can be used to convert power from a high voltage source such as a battery to a lower voltage, which is then used to power electrical equipment. It is used in a wide range of applications, such as power supplies, motor control, and renewable energy projects. There are several advantages to using this device, including improved power efficiency and increased system reliability.
In conclusion, the IPP042N03LGXKSA1 IGBT device is ideal for use in applications where efficient power conversion, fast switching, and low EMI are important. Its features make it a very attractive choice for a wide range of applications, making it an ideal choice for projects which require a high-power switching device.
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IPP08CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 95A TO-2... |
IPP076N15N5AKSA1 | Infineon Tec... | 3.58 $ | 616 | MV POWER MOS |
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IPP034N03LGHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A TO-22... |
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