IPP065N03LGXKSA1 Allicdata Electronics
Allicdata Part #:

IPP065N03LGXKSA1-ND

Manufacturer Part#:

IPP065N03LGXKSA1

Price: $ 0.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 50A TO-220-3
More Detail: N-Channel 30V 50A (Tc) 56W (Tc) Through Hole PG-TO...
DataSheet: IPP065N03LGXKSA1 datasheetIPP065N03LGXKSA1 Datasheet/PDF
Quantity: 54
1 +: $ 0.80010
10 +: $ 0.71190
Stock 54Can Ship Immediately
$ 0.89
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP065N03LGXKSA1 is a product of International Rectifier, a power management semiconductor supplier, and is part of their range of discretes, specifically transistors and FETs. It is a single Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a type of FET which controls a current with a single gate. The device is a N-Channel MOSFET which is a type of device that utilizes a voltage to control current and is made of three terminal components. It has a Drain connected directly to the source and a Gate-Source electrode separated by a gate oxide layer. The Gate is connected to the Source and can be controlled independently.

One major application field of the IPP065N03LGXKSA1 is switching. When the Gate of the MOSFET is activated it turns the device on allowing current to flow between the Source and Drain, thus controlling the output current of the switch. This switching action is often used in power supply, DC motor control and other applications where an on-off switch is needed. The IPP065N03LGXKSA1 is especially suited for these applications as it has an ON Drain-Source resistance rating of 6mΩ and an ON Gate-source voltage rating of 3V.

The IPP065N03LGXKSA1\'sworking principle is based on the operation of a Metal Oxide Semiconductor Field Effect Transistor. In this device, the Gate-Source electrode is separated by an oxide layer and can be used to control the current that passes through it. When the voltage applied to the Gate is higher than the source voltage, an electrical field is created that pulls current from the drain, thus turning the device on. When the Gate voltage is lowered, current stops flowing and the device turns off. As the device is a single MOSFET, it was designed to only use one Gate to control the current.

The IPP065N03LGXKSA1 offers many advantages over traditional switches, as it is small, requires a low voltage to operate and produces no noise when switched on or off. Additionally, it is highly flexible in terms of the current it can control, which makes it suitable for a wide range of applications. As such, it is often used in applications where a low voltage, low power switch is required.

The IPP065N03LGXKSA1 represents the state-of-the-art in MOSFET technology. It is a highly reliable single MOSFET device that can be used in a variety of applications such as switching, DC motor control and power supplies. Its low voltage requirement, simple gate control and no noise feature make it a cost effective and reliable choice.

The specific data is subject to PDF, and the above content is for reference

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