| Allicdata Part #: | IPP065N04NG-ND |
| Manufacturer Part#: |
IPP065N04N G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 50A TO220-3 |
| More Detail: | N-Channel 40V 50A (Tc) 68W (Tc) Through Hole PG-TO... |
| DataSheet: |  IPP065N04N G Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IPP065N04N G is an insulated gate bipolar transistor (IGBT) that has been designed for use in many electronic devices due to its strong performance and high resistance to various types of environment stress. This transistor has many advantages, including lower power consumption and better performance in high-temperature environments. This article will discuss the application field and working principle of the IBP065N04N G transistor.The IBP065N04N G transistor is primarily used in motor drivers, robotics, and power electronics applications. This type of transistor is commonly used in motor driver circuits, as it has very low losses, allowing it to deliver high efficiency under light or low switching frequencies. Additionally, this type of transistor has excellent switching characteristics, allowing it to achieve a high switching speed, even when working with large current ratings. Moreover, because this type of transistor has very low on-state voltage losses, it is suitable for use in higher voltage applications, such as in power electronics circuits.As with other types of transistors, the IBP065N04N G is an electronic device consisting of three primary terminals: the collector, base, and emitter. These terminals control the electrical current flow through the transistor by allowing or preventing the flow of electrons between the collector and emitter terminals. The transistor works by using the base terminal to control the amount of current flowing between the collector and emitter. When a voltage is applied to the base terminal, the current flows through the transistor, and when the voltage is removed, the current stops flowing. This basic principle of the transistor allows for many applications.In addition to its use in motor drivers, robotics, and power electronics, the IBP065N04N G transistor can also be used in other electronic devices, such as power supplies and audio amplifiers. This type of transistor is highly reliable and has a very low breakdown voltage, which makes it suitable for use in high-power applications. It also has a wide operating temperature range and can operate at high speeds without consuming too much power.The IBP065N04N G transistor is an excellent choice for many applications due to its excellent performance and reliability. It has a wide range of applications and a long life, which makes it well-suited to many electronics devices. Moreover, it has a high switching speed, low voltage losses, and excellent temperature resistance, making it an ideal choice for high-power circuits. This type of transistor has become increasingly popular in recent times due to its excellent performance, reliability, and affordability.The specific data is subject to PDF, and the above content is for reference
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