
Allicdata Part #: | IRF1010ZS-ND |
Manufacturer Part#: |
IRF1010ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 140W (Tc) Surface Mount D2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF1010ZS is a medium voltage N-channel enhancement-mode power Field Effect Transistor (FET). It can be used for high speed switching applications with its unique design parameters like fast switching times and low gate drive power. This device is rated for 20 volts and can handle up to 2.5 amps. It is also rated for an on-state drain current of 160 mA, which makes it an ideal device for a wide range of applications.
In simpler terms, the IRF1010ZS is a type of transistor which can be used for a variety of purposes. It is designed to operate in high speed switching applications, enabling quicker processing and data transfer. It is constructed of three layers, consisting of a gate, channel and source, which essentially control the current that flows through it when it is activated.
In order to maximize its potential, the IRF1010ZS is designed with a low on-resistance, allowing for better power transfer. This feature helps reduce power loss, increasing efficiency and making it more suitable for applications where power consumption is important. It also allows for faster switching times, reducing the power needs of applications, while still being able to process the required data quickly.
The gate of the IRF1010ZS is comprised of two separate terminals, which are connected to the main chip, allowing for better control of the voltage applied to the gate. The main chip is what allows the IRF1010ZS to function at its maximum potential, and is responsible for the device\'s ability to block or allow current flow. Through the use of the gate and other components, the IRF1010ZS is able to keep the current within a certain range in order to protect the components from getting damaged.
The main feature of the IRF1010ZS is its ability to handle high-level switching speeds while consuming very little power, making it the ideal choice for low-power and high-efficiency applications. As a result, the IRF1010ZS can be found in a variety of electronic products, such as computers, mobile phones, televisions, and home appliances. It is also widely used in electrical equipments, and can be used for a variety of purposes, from motor control systems to LED lighting.
The working principle of the IRF1010ZS can be explained with a simple diagram. When the gate is activated, current flows through the device, while the voltage applied to the gate acts as a control factor to regulate the flow of current. When the voltage drops to zero, the current stops, and the device is considered off. This is the basic principle of the device.
In summary, the IRF1010ZS is an incredibly versatile and efficient device, capable of functioning in a variety of applications, from low power to high speed switching. It is composed of a gate, channel, and source, which all work together to ensure maximum efficiency. Due to its unique design parameters, such as low on-resistance and reduced power consumption, the IRF1010ZS can be found in a variety of products and applications, ranging from computers to motor control systems.
The specific data is subject to PDF, and the above content is for reference
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IRF1010EZSPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 75A D2PAK... |
IRF1324STRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 24V 195A D2PA... |
IRF1503SPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 75A D2PAK... |
IRF1010EZLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 75A TO-26... |
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IRF1010ESTRLPBF | Infineon Tec... | -- | 22400 | MOSFET N-CH 60V 84A D2PAK... |
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IRF1010Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 75A TO-22... |
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IRF1607 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 75V 142A TO-2... |
IRF1104STRR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A D2PA... |
IRF1010ZS | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 75A D2PAK... |
IRF1404SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 162A D2PA... |
IRF1405ZSTRLPBF | Infineon Tec... | 0.94 $ | 1000 | MOSFET N-CH 55V 75A D2PAK... |
IRF1405ZLPBF | Infineon Tec... | -- | 1648 | MOSFET N-CH 55V 75A TO-26... |
IRF1018EPBF | Infineon Tec... | -- | 310 | MOSFET N-CH 60V 79A TO-22... |
IRF1324PBF | Infineon Tec... | -- | 1266 | MOSFET N-CH 24V 195A TO22... |
IRF1404L | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 162A TO-2... |
IRF1018ESLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 79A TO-26... |
IRF100B202 | Infineon Tec... | -- | 6000 | MOSFET N-CH 100V 97A TO-2... |
IRF1503STRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 75A D2PAK... |
IRF1104S | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 100A D2PA... |
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IRF1405STRLPBF | Infineon Tec... | -- | 800 | MOSFET N-CH 55V 131A D2PA... |
IRF1010NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 85A TO-22... |
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IRF1010NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 85A TO-26... |
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