IRF1405S Allicdata Electronics
Allicdata Part #:

IRF1405S-ND

Manufacturer Part#:

IRF1405S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 131A D2PAK
More Detail: N-Channel 55V 131A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF1405S datasheetIRF1405S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF1405S is an N-channel enhancement mode power MOSFET. It is a field-effect transistor (FET) that is used to amplify or switch electronic signals. It is often used in switching power supplies, high-voltage DC/DC converters, and other applications that involve the management of large currents or voltages.

The IRF1405S has an on-resistance of 53.7 milliohms, a breakdown voltage of 14 volts, and a maximum current rating of 127 amps. It is a single-level MOSFET and it has an integrated power package design which improves the thermal and electrical reliability.

The working principle of the IRF1405S is electrical control. The power is delivered from a DC source, which is then fed into the applied circuit. This DC source is then passed through a gate electrode. This gate electrode can either increase or decrease the power voltage, depending on the signal level.

The MOSFET also has a drain electrode, which directs the voltage to the applied circuit. When the gate is positive, the current flows through the drain and the applied circuit. When the gate is negative, the current will be diverted away from the drain and the applied circuit. This allows the user to control the amount of current flowing in the applied circuit.

One of the main application fields of the IRF1405S is voltage switching. Voltage switching involves controlling the voltage that is passed through an applied circuit. This is commonly used in high-power electronic systems, such as in switching power supplies, which require fast control of the applied voltage. It is also used in high-voltage DC/DC converters and other applications that involve the management of large currents or voltages.

The IRF1405S is also widely used in the automotive industry. It is commonly used in fuel injection systems, power steering systems, and vehicle lighting systems. It can also be used in the control of motor speed and the delivery of power in special-purpose engines.

In summary, the IRF1405S is an N-channel enhancement mode power MOSFET. It has an on-resistance of 53.7 milliohms, a breakdown voltage of 14 volts, and a maximum current rating of 127 amps. The working principle of the IRF1405S is electrical control, which enables the user to control the amount of current flowing in the applied circuit. It is commonly used for voltage switching in high-power electronic systems, such as switching power supplies and high-voltage DC/DC converters, as well as in the automotive industry.

The specific data is subject to PDF, and the above content is for reference

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