IRF1310NSTRLPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	36 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRF1310NSTRLPBF is an N-Channel, low-power, small outline, dual-N MOSFET. It is designed for applications requiring high current and low power dissipation. It is a highly reliable and efficient FET device, which can be used in a variety of applications.

Application Field

The IRF1310NSTRLPBF can be used in a variety of applications, including:

• High-speed switching applications such as converting, relaying, and regulating.
• Low-frequency power control, including active filters and motor controls.
• High-current, low-voltage RF power amplifiers.
• Computers and peripherals, such as disk drives and printers.
• Cellular phones and other communication devices.
• Automotive electronics, such as switches, sensors, and microcontrollers.

The IRF1310NSTRLPBF is also used in industrial electronic equipment, such as motor controllers, safety systems, and frequency converters. Its efficiency, small size and low power dissipation make it ideal for portable electronics, such as cell phones and PDAs.

Working Principle

The IRF1310NSTRLPBF is an N-Channel MOSFET, which means that it is an insulated-gate FET in which the gate terminal is insulated from the semiconductor substrate by an oxide layer. This layer is used to control the flow of current between the drain and source terminals.When a voltage is applied to the gate terminal, it creates an electric field between the oxide layer and the semiconductor substrate, inducing a current between the drain and source terminals. This current is known as the Drain-Source current. As the voltage increases, the drain-source current also increases.The IRF1310NSTRLPBF is a small-outline device, meaning that the physical size of the device is smaller than the standard MOSFET. This allows for higher current densities, which in turn leads to reduced cost and size.

Conclusion

The IRF1310NSTRLPBF is a high-current, low-power, small-outline MOSFET. It is ideal for use in a variety of applications, including high-speed switching, power control, RF power amplifiers, computers, cellular phones, and automotive electronics. Its small size, low power dissipation, and high current density make it ideal for portable electronics. It operates on the principle of creating an electric field between the gate and the semiconductor substrate to induce drain-source current.

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