IRF1405ZSTRL7PP Allicdata Electronics

IRF1405ZSTRL7PP Discrete Semiconductor Products

Allicdata Part #:

IRF1405ZSTRL7PPTR-ND

Manufacturer Part#:

IRF1405ZSTRL7PP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 150A D2PAK-7
More Detail: N-Channel 55V 120A (Tc) 230W (Tc) Surface Mount D2...
DataSheet: IRF1405ZSTRL7PP datasheetIRF1405ZSTRL7PP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF1405ZSTRL7PP is a commonly used field-effect transistor (FET) in many industrial applications.

This type of transistor is an N-channel enhancement mode MOSFET, meaning it employs a small electric charge to control the movement of electrons. It has an \'off\' state and an \'on\' state, where the \'on\' state allows for the flow of electrons and the \'off\' state does not. This makes them ideal for use in switching applications, since they can be controlled relatively easily.

One of the main advantages of this type of FET is that they are relatively small in size, meaning they can be used in a range of applications where space is at a premium. They are also relatively easy to use, because they do not require a large number of components or circuit boards to be incorporated into a design.

The IRF1405ZSTRL7PP is a single-channel FET, meaning it has a single gate terminal, which is used to control the flow of electrons. This makes it ideal for use in applications where a single signal is required to control multiple transistors. This type of FET is typically used in many industrial applications, such as motor control, lighting control and power management.

The working principle of the IRF1405ZSTRL7PP FET is based on the principle of electrostatic attraction, whereby two metals are placed together and a voltage is applied to one of them. When a positive voltage is applied to the gate terminal of the FET, a positive electric field is created, which attracts the electrons in the channel region of the device. This causes the electrons to flow through the device and thus creates an \'on\' state, where the current is allowed to pass through the FET.

When a negative voltage is applied to the gate terminal, the electric field is reversed, pushing the electrons away from the channel region, thus creating an \'off\' state, where the current is blocked from passing through the device.

The IRF1405ZSTRL7PP FET is a versatile component that can be used in a wide range of industrial applications. It is relatively easy to use, since it requires only one control signal to switch a single device. Additionally, it is relatively small in size and thus can be used in applications where space is limited.

The specific data is subject to PDF, and the above content is for reference

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