IRF1010NL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	180W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3210pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	11 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	85A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF1010NL application field and working principleIRF1010NL is a type of N-channel metal–oxide–semiconductor field-effect transistor (MOSFET), which is a type of transistor used for switching and amplifying electronic signals. MOSFETs are prevalent because of its low cost and fast switching ease. IRF1010N is commonly used for linear and switching applications.The term MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a type of semiconductor that controls current via an electric field. It is the basic foundation of modern electronics technology and is the most common type of transistor used in commercial and consumer electronics. This is due to their relative low cost and the fact that they are very efficient at switching large currents and voltage levels. Additionally, MOSFETs are able to switch at high frequencies, making them ideal for high-speed switching applications such as in microprocessors.Before giving description of working principle of IRF1010NL it is important to define what is MOSFET. MOSFET is a four-terminal device composed of an additional gate along with the source (S), drain (D) and body (B) terminals. Its main purpose is to block or allow the conduction of electrical current in three-terminal devices. It works by using an electric field to control the flow between the source and drain terminals. The voltage applied at the Gate electrode produces an electric field that polarizes the electron and hole carriers in the channel.The operating principle of IRF1010NL works as a voltage-controlled device, since an applied voltage is used to control the channel resistance. For example, a high input voltage will make the source-to-drain resistance equal to near zero since most of the channel resistance lies in the depletion region, which is effectively disconnected. An applied voltage will cause a strong inversion layer to be formed, allowing current to flow freely through the drain and source, thus allowing a high current to flow. The resistance of the device is lowered while an input voltage is applied, making it an ideal choice for controlling large currents in switch and power applications.The specific features of IRF1010NL are very suitable for high-frequency applications such as switching, current linearity and heat management due to its gate capacitance is less than that of other devices. This type of transistor is ideal for electrical engineering applications that require low voltage drives and higher efficiency and stability. The device works best when used to switch high voltages, such as in power switching circuits.Applications of IRF1010NL include motor control, audio amplifiers, power inverters, and high voltage switching circuits. It is also widely used in the power converter circuits of modern electronics such as AC to DC converter, DC to AC converters, LED drivers, and inverters, etc. Additionally, it can be used in power supply units, power amplifiers, solar modules, and AC/DC rectifiers. The transistor can also be used in RF amplifiers, IC drivers, and level shifters.In conclusion, IRF1010NL is a type of N-Channel MOSFET, mainly used for power switch applications and high voltage switching circuits. It is designed to handle a large switching capacity, good linearity and fast switching, making it a popular transistor in the electronic industry. Its ability to switch at higher frequencies makes it an ideal choice for high-frequency applications. As far as applications, IRF1010NL is widely used for motor control, audio amplifiers, power converters, and high voltage switching circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description