| Allicdata Part #: | IRF1404ZGPBF-ND |
| Manufacturer Part#: |
IRF1404ZGPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 180A TO220AB |
| More Detail: | N-Channel 40V 180A (Tc) 220W (Tc) Through Hole TO-... |
| DataSheet: |  IRF1404ZGPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 220W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRF1404ZGPBF is a high power, high speed MOSFET (metal-oxide-semiconductor field effect transistor) that has a wide range of applications. It is designed with a punch gate construction and rated for Vds (drain-source breakdown voltage) up to 600V, Id (drain current) up to 28A, and RDS(ON) (total on-resistance) as low as 50mOhms. Because of its high power and high speed capability, it is commonly used in power management, automotive, and industrial applications, such as motor control, high-side switching, and DC-DC converters.The package of the IRF1404ZGPBF is a TO-220AB, providing a convenient and reliable method of mounting the component to the power circuit board. By pressing the metal tabs to the top of the TO-220AB, the component can be securely held in place. The tabs can also be used to mount the component to a heat sink to help reduce the component’s temperature during operation.The working principle of the IRF1404ZGPBF is based on the electrostatic capacitance between the drain and source of a MOSFET. When a voltage is applied to the gate of the device, electrostatic capacitance builds and an electric field is created between the drain and source. This electric field causes the electrons to be attracted to the drain and causes the current to flow. By controlling the voltage on the gate of the device, the amount of current flowing through the device can be controlled, giving the MOSFET its familiar linear response.The IRF1404ZGPBF is capable of operating over a wide range of voltages, from 5V all the way to 600V. This, combined with its low gate input threshold voltage and low ON-resistance, makes it well suited for high power, high switching speed applications. In addition, its large terminal pads and robust construction make it easy to work with and very durable.In general, the IRF1404ZGPBF is a reliable, high power, high speed MOSFET suitable for many applications, such as motor control, high-side switching, and DC-DC converters. Its punch gate construction and TO-220AB package offer an easy and reliable way of mounting the device, while its low ON-resistance and wide operating range enable high power, high switching speed operation. With its large terminal pads and robust construction, the device is also very easy to work with.
The specific data is subject to PDF, and the above content is for reference
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