IRF1018ESPBF

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2290pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	69nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.4 mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	79A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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The IRF1018ESPBF is an enhancement-mode power metal oxide semiconductor field-effect transistor that is designed for use in general purpose applications. It is a single device that has a drain-source breakdown voltage of 55V and a maximum drain current of 4.7A. This transistor is typically used as a switch in power supply circuits and motor drivers.The IRF1018ESPBF is built using silicon technology, which means it is able to work over extreme temperatures without sacrificing its performance. This transistor is also capable of operating at very high currents and a wide voltage range. It is able to handle a peak current of up to 11.6A and a maximum voltage of 100V, making it a reliable and efficient switch for a variety of applications.The working principle of an IRF1018ESPBF is relatively simple. It is a field effect transistor that uses two thin metal layers (the source and the drain) to create a rectifier effect. In this case, the IRF1018ESPBF has a gate at the bottom, which is the control element. When the gate is provided with a positive voltage, it creates an electric field which attracts electrons. This causes the current to flow from the source to the drain, turning the transistor “on”. When the gate voltage is removed or decreased, the electric field disappears, and the electrons are no longer attracted to the gate, so the current stops flowing and the transistor turns “off”.The IRF1018ESPBF is an excellent choice for applications where there is a need for a high-performance switch. It can be used in a wide range of applications, from motor drives and power supply circuits to audio amplifiers and HVAC. It is also commonly used in home automation systems, as well as automotive and industrial applications.The IRF1018ESPBF is a reliable and efficient transistor for a wide range of applications. It has a drain-source breakdown voltage of 55V and a maximum drain current of 4.7A, making it an excellent choice for motors, power supplies and other high-power applications. This transistor is also able to handle a peak current of up to 11.6A and a maximum voltage of 100V, making it suitable for a range of devices and systems. As an added bonus, it is also built using silicon technology, meaning it can operate over extreme temperatures without sacrificing performance.

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