IRF1104L

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IRF1104L is a type of single Power Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The suffix "L" indicates that this particular device is logic level-compatible and has a lower on-state resistance compared to other types of MOSFETs. It is commonly used in the applications such as switching, amplification and voltage regulation.

General Characteristics & Features

The IRF1104L MOSFET has a drain-source voltage rating of 60V DC and a maximum drain current of 11A. It has an input capacitance in the range of 700 to 900 pF. It is rated for a maximum power dissipation of 45W and a maximum avalanche energy of 70mJ. It also has a super-high dv/dt rating of 2000 V/μs, making it suitable for high-speed switching applications.

Applications

The IRF1104L MOSFET is used in a wide variety of applications such as pulse width modulated voltage regulation, DC-to-DC converters, gated drivers, high side switches, and motor driver applications. It is also used in power supplies for electrolytic capacitors, IGBTs and SiC devices. The low on-state resistance and high dv/dt rating make it suitable for high-speed switching applications.

Working Principle

The IRF1104L MOSFET is a voltage-controlled device, meaning that it is controlled by a gate voltage. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons to the oxide layer of the MOSFET and turns it on. When the gate voltage is reduced or disconnected, the electric field disappears and the MOSFET shuts off. The MOSFET also has a Drain-Source breakdown voltage, which is the voltage at which current begins to flow between the drain and source when a voltage is applied between them. This breakdown voltage can be increased or decreased by changing the gate voltage.

As mentioned above, the IRF1104L MOSFET is commonly used in applications such as switching, amplification and voltage regulation. In switching applications, the MOSFET is used to turn electronic devices on and off. In amplification applications, the MOSFET is used as a voltage-controlled amplifier. Finally, in voltage regulation applications, the MOSFET is used to control the output voltage of a device by using pulse width modulation.

The IRF1104L MOSFET is a versatile device that is used in a wide range of applications. Its low on-state resistance and high dv/dt rating make it suitable for high-speed switching applications. Its drain-source breakdown voltage can be adjusted by controlling the gate voltage, making it suitable for voltage regulation applications. The MOSFET is also used in pulse width modulated voltage regulation, DC-to-DC converters, gated drivers and motor driver applications.

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