IRF1302S Allicdata Electronics
Allicdata Part #:

IRF1302S-ND

Manufacturer Part#:

IRF1302S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 174A D2PAK
More Detail: N-Channel 20V 174A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF1302S datasheetIRF1302S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4 mOhm @ 104A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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An IRF1302S is a silicon n-channel power metal-oxide-semiconductor field-effect transistor (MOSFET). This particular MOSFET is a single, three-terminal component with a maximum drain source voltage (Vdss) of 20V, a maximum drain current (Id) of 110A and a maximum power dissipation of 410W. The part is also supplied with a maximum junction temperature of 150̊ Celsius. This MOSFET is particularly well-suited for various applications, including power management in servers, computers and other computing devices, as well as in industrial, automotive, electrical and instrumentation applications.

The working principle of an IRF1302S is the same as that of other MOSFETs. Essentially, it acts as a switching device that controls the flow of electrons within a circuit. The MOSFET is composed of a gate, a source and a drain. When a potential difference is applied between the gate and the source, a depletion region of charge carriers is formed along with an electric field. This electric field influences the conductivity of the drain region, allowing the MOSFET to act as either a switch, an amplifier or a regulator. Depending on the gate-source voltage and the type of MOSFET, the device can be turned on and off, allowing current to flow through the drain region.

IRF1302S can be used to serve a variety of applications particularly in power management. The part can efficiently regulate the power of a circuit by adjusting the voltage supplied across its terminals. This is done by controlling the quantity of current flow between the gate and the source. It can act as an on/off switch, capable of shutting off the power to the circuit if a certain voltage or current level is exceeded, making it suitable for use in industrial power management systems. Additionally, the MOSFET can also be employed as an amplifier as well as a regulator, as it is able to adjust the magnitude of current flowing through its terminals. This makes the IRF1302S particularly well-suited for applications in audio and other current regulating circuits.

The IRF1302S is a highly versatile MOSFET, with a wide variety of application fields and working principles. Its ability to act as a voltage regulator, a switch, an amplifier, and a power regulator allows it to offer reliable performance and efficient functionality in a range of industrial, automotive, computing and instrumentation applications. As a result, the IRF1302S is increasingly becoming a popular choice among engineers and other power electronics design professionals.

The specific data is subject to PDF, and the above content is for reference

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