| Allicdata Part #: | IRF1404STRR-ND |
| Manufacturer Part#: |
IRF1404STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 162A D2PAK |
| More Detail: | N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
| DataSheet: | IRF1404STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7360pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 162A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF1404STRR is an extremely popular MOSFET device. This type of transistor, also referred to as an insulated-gate field-effect transistor (IGFET) is a three-terminal active from of semiconductor that is used in many different types of applications. It is especially useful for controlling high-power load switches and interfacing high-power loads to control circuity.
The IRF1404STRR is an N-channel MOSFET, meaning that it is of the type which carries current from the source terminal to the drain terminal when the gate terminal has a positive potential applied to it. This feature makes it ideal for applications where it is necessary to switch high currents and voltages. The IRF1404STRR has a very low on-resistance of 0.0081 ohms and can handle drain currents up to 12A, making it a widely used device in high-power applications.
The device consists of an insulated metal gate forming one terminal and a second terminal, which is connected to a channel region. It also consists of a third terminal which is connected to a source region between the metal gate and the channel region. The channel region consists of a thin semiconductor layer between the metal gate and source region. The source and drain terminals are typically connected to a voltage source or load.
When no voltage is applied to the gate terminal, the drain-source channel behaves like an insulator, preventing current from flowing between the source and drain terminals. When a positive voltage is applied to the gate terminal, it creates an electric field which causes electrons in the channel region to become mobile. This "induces" a current between the source and drain terminals, allowing current to flow through the device.
The IRF1404STRR is well suited for applications such as motor speed control, circuit protection, and load switching. It can also be used to buffer AC or DC loads, as well as providing current amplification. The IRF1404STRR is a robust and reliable device, and provides an optimized solution for the most demanding power switching requirements.
In conclusion, the IRF1404STRR is an extremely versatile MOSFET device with excellent switching performance. This device is capable of handling large currents and voltages, making it suitable for a wide range of applications. Its low on-resistance and robust design make it an ideal choice for high-power designs.
The specific data is subject to PDF, and the above content is for reference
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IRF1404STRR Datasheet/PDF