| Allicdata Part #: | IRF1405LPBF-ND |
| Manufacturer Part#: |
IRF1405LPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 131A TO-262 |
| More Detail: | N-Channel 55V 131A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: | IRF1405LPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5480pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 101A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 131A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF1405LPBF is an N-channel Enhancement Mode Power MOSFET (EPMOS), which is used to control the flow of a high current of up to 55A. Its depletion mode version, the IRF1405LPBF-EP, is also available. The IRF1405LPBF is a low cost and high-performance device, due to its robust build and simple operation. The device features high breakdown voltage, low on-resistance, and low input capacitance.
The application of the IRF1405LPBF can range from various automotive, industrial, military, consumer, and consumer electronic devices. Due to its simple yet robust design, it is also suitable for high-performance signal processing applications such as audio/video amplifiers, switching power supplies, and PWM converters. The low-power consumption and high-frequency performance make the IRF1405LPBF ideal for today\'s high-end digital devices.
In terms of working principle, the IRF1405LPBF is typically used as a switch in either an on or off state, depending on the need at hand. When the device is in an ‘on’ state, current flows through the device depending on the level of control signal that is provided to the gate of the device. When the device is in an ‘off’ state, no current flows. The switch is triggered when a certain threshold voltage is reached at the gate, and a current is applied to the gate of the device.
The construction of the IRF1405LPBF consists of two layers of opposite charge carriers, with the gate at the center. The electrons that pass through the N-type channel move between the drain and source of the device, creating channel holes. This channeling effect allows the current to flow between the source and drain terminals.
The IRF1405LPBF has a low on-resistance of around 75mΩ, is available in TO-263 and D-PAK SMD packages, and can operate at up to 175°C. It is also rated for operation in either a reverse or forward polarity, so it can be used for a wide range of applications. The device can be used in audio and video signal processing, in motor control, and as a logic level switch.
In summary, the IRF1405LPBF is a high-performance N-channel Enhancement-Mode Power MOSFET that can control a high current of up to 55A. It is suitable for a wide range of applications, including audio and video amplifiers, switching power supplies, and PWM converters. Additionally, it is available in TO-263 and D-PAK SMD packages and is resistant to both reverse and forward polarities. The device works by allowing electrons to flow through the N-type channel when the gate reaches a certain threshold voltage, thus allowing most current to be conducted.
The specific data is subject to PDF, and the above content is for reference
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IRF1405LPBF Datasheet/PDF