IRF1405PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF1405PBF is a N-channel enhancement-mode power field-effect transistor employed in industrial and commercial applications. This device delivers power, reliability, and performance features usually found only in expensive power MOSFETs, yet in a very small package. This device is also designed to meet the most stringent safety requirements of today’s demanding applications.

IRF1405PBF has a wide range of applications that include high-performance switching, variable-speed motor control, lighting control, industrial and automotive applications. It can be employed in low-side and high-side switches, SMPS, and battery management. The high power handling capacity and low on-resistance makes IRF1405PBF suitable for a variety of high current and high-voltage applications.

The operating principle of IRF1405PBF is easy to understand. It is composed of a gate which is used to control the number of electrons that flow from one terminal to another, and a drain and source which supplies and receives the electrons. The gate has a unique characteristic of having a high resistance to current, called the Gate-Source voltage. This voltage determines how many electrons can flow through the transistor. If the Gate-Source voltage is below the threshold value, then no current will flow; and if it is very high, then many electrons will flow. Basically, the Gate-Source voltage determines how much current is allowed to flow through the transistor.

IRF1405PBF also has a variety of features that make it highly suitable for a wide range of applications. It has extremely low on-resistance, very low gate-source capacitance, low threshold voltage, and low gate-source leakage current. Furthermore, it has high operating temperature and high switching frequency. These features, combined with its small size, make IRF1405PBF an ideal choice for various applications in industrial, consumer, automotive and aerospace markets.

In conclusion, IRF1405PBF is a powerful and reliable N-channel enhancement-mode power field-effect transistor that can be used in a wide variety of applications due to its excellent performance features, low on-resistance, high power handling capacity, and small size. It is suitable for high current and high-voltage applications, and its superior features make it an ideal choice for users in industrial, consumer, automotive and aerospace markets.

The specific data is subject to PDF, and the above content is for reference