| Allicdata Part #: | IRF1405STRR-ND |
| Manufacturer Part#: |
IRF1405STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 131A D2PAK |
| More Detail: | N-Channel 55V 131A (Tc) 200W (Tc) Surface Mount D2... |
| DataSheet: | IRF1405STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5480pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 101A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 131A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF1405STRR is an enhancement-mode vertical Field-Effect Transistor (FET) manufactured by International Rectifier (IR). As a single N-channel device, the transistor is well suited to use in a variety of applications, due to its excellent compatibility with standard logic levels and high-speed switching capabilities.
The transistor\'s "Enhancement mode" makes it ideal for use in logic-level circuits and pulse-width modulated designs. This mode means that the gate bias voltage must be a certain threshold above the source voltage in order for the device to begin conducting. As a result, very little current flows through the gate and its relatively low input capacitance produces faster switching times.
IRF1405STRRs are also popular because of their low RDS(on) value. This parameter is defined as the resistance between the source and drain when the device is operating at a specified gate-source voltage. The low value of this parameter helps reduce the overall power loss in circuits where the device is used, by allowing more current to pass through the transistor without losing much voltage.
The IRF1405STRR is primarily used in power supply and motor control applications, low-voltage motor control, and portable electronic devices. Thanks to its high-speed switching capabilities, the transistor is also well-suited for switch-mode power supply systems (SMPS) and DC-DC converters. The device is also used in high-frequency switching circuits, such as in television receivers and radio transmitters.
When it comes to larger devices such as computer assemblies, the IRF1405STRR is used as both a switch device and as a voltage regulator. The device can sense errors in the output voltage and adjust the voltage to maintain desired levels. This feature makes it ideal for protecting devices from power surges.
In terms of working principle, the IRF1405STRR works by using a gate-source voltage to control the flow of current between its source and drain. When the voltage applied to the gate-source exceeds a certain threshold, the current will begin flowing. The current is then directed by the circuit in which the device is used, where it can be used to switch on and off a power supply or other device.
The IRF1405STRR is an excellent choice for a variety of small and large applications due to its low RDS(on) value and fast switching speed. Its ability to sense errors and adjust the output voltage makes it an ideal fit for large electronic assemblies, while its compatibility with standard logic levels makes it well-suited for low-voltage motors and portable electronic devices. The device is also useful in high-frequency switching circuits, such as in television receivers and radio transmitters.
The specific data is subject to PDF, and the above content is for reference
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IRF1405STRR Datasheet/PDF