IRF1902GPBF

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The IRF1902GPBF is a high-power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device. It is a versatile single-device solution for power switching and drive applications. The IRF1902GPBF operates in high-speed, low gate drive voltage, high current, and low on-resistance modes.

The device is rated for 0.2Ohms on-resistance at 4.5A switching current, which makes it suitable for high power switching applications where low on-resistance is needed to reduce power dissipation. Additionally, the device has a fast switching speed of 1.5ns, which is useful for high speed applications such as motor control or power conversion. The IRF1902GPBF can operate on gate voltages from 4.5V to 25V.

The IRF1902GPBF device is also well-suited for automotive, consumer, and industrial applications. The device is rated for continuous drain-source voltages up to 100V, and drain currents up to 120A. This makes it suitable for a wide range of automotive, consumer, and industrial applications that require high switching power. The device is also capable of handling high operating temperatures, up to 175°C junction temperature, which makes it suitable for harsh environments and industrial applications.

The device works by modulating electrical charge in a semiconductor channel between a source and a drain. A small positive or negative voltage applied to the gate can increase or decrease the conductivity of the channel, allowing the MOSFET to be used as a controlled switch. Additionally, the device’s built-in body diode provides protection against reverse polarity voltages.

The IRF1902GPBF is an ideal choice for power switching and drive applications that require high on-resistance, fast switching times, and high current handling. The device’s ability to operate at high temperatures makes it suitable for automotive, consumer, and industrial applications. Additionally, the device’s body diode provides protection against reverse polarity voltages.

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