IRF610S Allicdata Electronics
Allicdata Part #:

IRF610S-ND

Manufacturer Part#:

IRF610S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 3.3A D2PAK
More Detail: N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Surface...
DataSheet: IRF610S datasheetIRF610S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF610S is a type of high-power field-effect transistor (FET) which belongs to the single Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) category. It is often used in various electronic devices and circuits, such as robotics, computers, etc. The purpose of discussing about this particular FET is to explain its working principle and highlight its applications.

The IRF610S is a unipolar device that consists of two PN junctions. The source side is composed of an N-type material, while the drain side consists of a P-type material. In order to activate the device, an external voltage is applied on the gate terminal, which in turn produces an electric field. This electric field causes the electrons in the N-type material to flow between the source and the gate, which creates a conductive channel between the two. This conductive channel is known as the transistor’s channel resistance.

The channel resistance can be controlled by varying the voltage on the gate terminal. As this voltage increases, the channel resistance decreases, which allows more current to pass through the channel. Conversely, when the voltage decreases, the channel resistance increases, and less current passes through it. This ability to control the amount of current passing through a transistor is known as the current-driving capability of the FET.

As for its applications, the IRF610S can be used in a variety of systems, including robotics, computers, and other electronic devices. For example, the IRF610S can be used to make motor-controllers and amplifier-circuits, since it has the ability to drive large currents. Additionally, it can also be used as an amplifier, since the current-driving capability of the FET makes it well-suited for this purpose. Finally, this type of transistor can also be used in digital circuits, because it is able to switch signals in a short period of time.

In conclusion, the IRF610S is a single MOSFET which combines high power capability with excellent current-driving capability. This makes it suitable for a wide variety of applications, including robotics, computer systems, digital circuits, and amplifiers. As such, it is an important component in many electronic devices and circuits.

The specific data is subject to PDF, and the above content is for reference

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