| Allicdata Part #: | IRF630PBF-ND |
| Manufacturer Part#: |
IRF630PBF |
| Price: | $ 0.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 9A TO-220AB |
| More Detail: | N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-22... |
| DataSheet: | IRF630PBF Datasheet/PDF |
| Quantity: | 3064 |
| 1 +: | $ 0.97000 |
| 10 +: | $ 0.94090 |
| 100 +: | $ 0.92150 |
| 1000 +: | $ 0.90210 |
| 10000 +: | $ 0.87300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF630PBF is a type of field-effect transistor (FET) designed for use in high-power and high-voltage applications. It is commonly used to switch large currents in personal and automotive electronics and communication equipment. The device is a single package N-channel MOSFET, with a maximum operating temperature of 150 °C. The maximum drain-source voltage is 500V and the maximum drain current is 30A.
The IRF630PBF is made up of three main components – a source, a drain, and a gate. The source and the gate are electrically connected, while the gate and the drain are not. An electric field is produced between the source and the drain when a voltage is applied to the gate. This electric field allows current to flow from the source to the drain. The amount of current that can flow is determined by the voltage applied to the gate and the impedance of the circuit.
An important feature of the IRF630PBF is its ability to switch high currents at high voltages without suffering damage or generating excessive heat. This allows it to be used in applications such as power supplies, motor control systems, and switching applications. The device has a low total gate charge and a low threshold voltage, which makes it ideal for applications with higher operating frequencies. Its low on-state resistance also reduces power losses.
The IRF630PBF has a wide range of applications, including automotive, power management, audio communication, and medical equipment. In automotive applications, it can be used to control the fuel injection system, the injection quantity, and the engine speed. In power management applications, it can be used as a replacement for mechanical relays in power supplies, motor drives, and switching systems. It can also be used to control the output of high-power amplifiers in audio systems, and to regulate the intensity of medical laser devices.
The IRF630PBF FET is an ideal choice for high-power and high-voltage applications ensuring reliable operation. Its low cost and simple design make it a popular choice for a variety of applications. With its wide range of applications and reliable performance, the IRF630PBF is a versatile and reliable component for many different applications.
The specific data is subject to PDF, and the above content is for reference
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IRF630PBF Datasheet/PDF