IRF6648TRPBF

Vgs(th) (Max) @ Id:	4.9V @ 150µA
Package / Case:	DirectFET™ Isometric MN
Supplier Device Package:	DIRECTFET™ MN
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2120pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	86A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRF6648TRPBF is a low-voltage, bidirectional, dual-channel, 10V N-channel MOSFET. It can handle up to 8.5A and is suitable for use in a wide range of applications. It is characterized by low ON resistance, low Gate-Source threshold voltage and low-on-resistance variation at high temperature. It is ideal for use in applications such as power converters and motor control.The IRF6648TRPBF is a p-type metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are used in many electronic applications, from switchable circuits to light detection. The IRF6648TRPBF has two channels: drain and source. The semiconductor material has two regions: a source region and a drain region. The source region is the one at which the electrons are generated and the drain region receives the output current produced by the source region.The working principle of the IRF6648TRPBF can be explained by the fact that it uses two types of charge carriers: electrons and holes. The gate electrode, which is placed between the source and drain region, creates an electric field that controls the number of charge carriers present and the current flowing in the device. When a voltage is applied to the gate electrode, it creates an electric field that pulls the electrons out of the source and into the drain region. The number of electrons and holes present in the regions depends on the size of the electric field and the amount of voltage applied.In terms of applications, the IRF6648TRPBF is typically used in power converters and motor control. In such applications, it is often used to control the speed, direction, and torque of a motor. It is also suitable for applications such as switchable circuits, light detection, and many other applications.When using the IRF6648TRPBF, it is important to observe the datasheet specifications. These include the maximum voltage, current, drain-source on-state resistance, gate-source threshold voltage, and gate resistance. These specifications can vary depending on the specific device and the application. Additionally, when using the device in applications where the temperature may exceed the maximum recommended operating temperature, proper cooling and protection should be used.The IRF6648TRPBF is a versatile, low-voltage, dual-channel MOSFET that is well suited for use in many applications. It is characterized by low ON resistance, low gate-source threshold voltage, and low-on-resistance variation at high temperature. It is ideal for use in applications such as power converters and motor control where it is used to control the speed, direction, and torque of a motor. It is also suitable for use in switchable circuits and light detection. In any application, it is important to observe the datasheet specifications for the device, including maximum voltage and current, as well as drain-source on-state resistance, gate-source threshold voltage, and gate resistance. Additionally, when used in applications where the operating temperature may exceed the maximum recommended temperature, proper cooling and protection should be used.

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