IRF9520STRL Allicdata Electronics
Allicdata Part #:

IRF9520STRL-ND

Manufacturer Part#:

IRF9520STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 6.8A D2PAK
More Detail: P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surfa...
DataSheet: IRF9520STRL datasheetIRF9520STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF9520STRL is a 60 V N-channel MOSFET and belongs to the STRL series. This device has a low RDS(on) and gate charge, making it ideal for use in high-efficiency and high-saturation applications. It also provides good thermal and electrical stability and is suitable for use in high-current switching applications.

The IRF9520STRL is an enhancement type Field-Effect Transistor (FET) and is made with a three-layer upgrade of Silicon. Each layer consists of a gate material such as an oxide or semiconductor, a source material and a drain material. The three layers together create the transistor structure and are connected together by a source and drain region with an intrinsic base between the source and drain. All of these layers are sustained on a single semiconductor substrate.

The application field of the IRF9520STRL is mainly in consumer and industrial electronics. These high-performance FETs are widely used in power supplies, motor drives and other static performances of electronic systems. In consumer electronics such as LCDs, LED Tvs, Home Theaters and Automotive products, this device is used for the power supply and the motor drive unit. Also, in industrial applications these FETs are widely used in the triggering, amplification and protection functions of industrial control systems. The IRF9520STRL is widely used in high-current switching applications because of its low RDS(on) and gate charge, making it ideal for use in high-efficiency and high-saturation applications.

The working principle of the IRF9520STRL is based on the principle of electrical field effect where a beam of electrons pass through a time-varying electric field. This creates a strong electric field which controls the flow of current from the source to the gate electrode. When a voltage is applied to the gate electrode, the electrons in the bulk region of the substrate flow toward the gate electrode due to the influence of the electric field. This process is called "gate effect".

The electrons that flow to the gate electrode create a conductive channel between the source and the drain and the drain current increases. Thus, the resistance (RDS) between the source and the drain decreases and the current through the transistor increases. The RDS value of the IRF9520STRL is very low, which means that the transistor can handle high currents. This transistor can be switched on and off very quickly by controlling the voltage applied to the gate electrode.

This transistor can also be used as a switch in circuits as it can turn the current on or off based on the voltage applied at the gate. This transistor can also be used in appropriate circuits to amplify the voltage or current of the signal at output. This way, it can be used in Amplifier, Oscillator, Amplitude Modulator and Computers for controlling, monitoring and data conversion.

The IRF9520STRL is a popular enhancement-mode Field-Effect Transistor that is widely used in consumer and industrial electronics for high-current switching applications. Its low RDS and gate charge makes it ideal for use in high-efficiency and high-saturation applications. It has also found applications in amplifiers, oscillators, amplitude modulators and computers for controlling, monitoring and data conversion.

The specific data is subject to PDF, and the above content is for reference

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