Allicdata Part #: | IRF9520STRR-ND |
Manufacturer Part#: |
IRF9520STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 6.8A D2PAK |
More Detail: | P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surfa... |
DataSheet: | IRF9520STRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF9520STRR is a type of a field-effect transistor (FET) manufactured by International Rectifier. The IRF9520STRR is a N-channel enhancement-mode power MOSFET (metal-oxide semiconductor field-effect transistor). This type of transistor is commonly used in electronic circuits when power, speed, or switching is required.
The IRF9520STRR is made with a planar stripe MOSFET, which has excellent characteristics and stability due to its "vertical" conduction channel between the source and drain. These FETs are mainly used in medium power switching and regulator applications.
The IRF9520STRR is a dynamic enhancement-mode device. It has a low on-state resistance and therefore it is suitable for use in low voltage, low current-switching applications where improved efficiencies are desired. It also provides better thermal characteristics than conventional hex-fet transistors.
The IRF9520STRR has a drain-source voltage rating of 200 volts, a drain-gate voltage rating of 200 volts, and a gate-source voltage rating of 15 volts. It is designed for operation between -55°C to 175°C and can handle a maximum operating temperature of 250°C. This makes it suitable for many industrial and high temperature applications.
When it comes to working principle, the IRF9520STRR works in a very simple way. When the gate voltage is applied, current starts flowing from the drain to the source. This is because the electrons that were held in between the junction between the gate and the source are released due to the electrical field created by the applied gate voltage. This phenomena is known as inversion and it\'s the basis of operation of all the FETs.
Furthermore, the drain-source voltage of the IRF9520STRR is controlled by the gate voltage, and the drain-source current can be varied by changing the gate voltage. This property makes the IRF9520STRR suitable for use in regulating circuits as it can be used as a switch to control the flow of current.
The IRF9520STRR is most commonly used in applications where high power switching is required such as in DC-DC converters, audio amplifier circuits, motor control circuits, battery-operated devices, and high-performance audio equipment. It is also used in automotive applications such as ignition systems and fuel injection systems. Additionally, the IRF9520STRR can be used for power level shifting and voltage conversion.
In conclusion, the IRF9520STRR is a type of N-channel power MOSFET with a variety of applications. It is characterized by a low on-state resistance, a low drain-source voltage rating, and a high drain-source current rating. It is mainly used in high power switching and regulator applications, but it can also be used for power level shifting and voltage conversion. It is well suited for use in many industrial and high temperature applications, making it a very useful transistor in many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
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