IRF9630S

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta), 74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	800 mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.5A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRF9630S is a commonly used MOSFET (metal-oxide-semiconductor field-effect transistor) that offers excellent performance in a wide range of applications. In fact, it is one of the most popular and widely used MOSFETs on the market today. It is a single enhancement mode power MOSFET, capable of operating in high-current, low-voltage conditions, and offers superior performance in terms of on/off switching speed, power handling capability, and temperature stabilities. This makes it ideal for use in power conversion, audio power amplification, and consumer electronics applications.The IRF9630S is a n-channel enhancement-mode MOSFET. It consists of a semiconductor substrate – usually composed of silicon – and a thin layer of gate oxide that lies between the semiconductor substrate and the gate electrode. The structure of the MOSFET is similar to a MOS capacitor: when a positive voltage is applied to the gate, negative charges accumulate on the substrate, creating an inversion layer that enables current to flow. This is the basis of how the IRF9630S works and it is also the key to its superior performance.The IRF9630S can handle drain-source voltages up to 200V and can operate up to a maximum of 30A (typical). The characteristics of the transistor are such that it is capable of switching on and off at high speeds, and is able to provide the highest power efficiency in various switching and conversion applications. In many cases, the IRF9630S can replace multiple discrete components, resulting in a reduced circuit size and improved performance.The IRF9630S is also well-suited for audio power amplification applications, providing superior sound quality and low distortion. The device is capable of producing low-noise operation, and can drive even the most sensitive loads with minimal audible noise. In addition, it can also drive larger power levels without compromising sound quality.The IRF9630S is an ideal choice for many power conversion applications, providing high efficiency and low heat dissipation. The MOSFET operates in an enhancement mode, making it ideal for high-current, low-voltage circuits. The design features of the device are such that it is able to handle very high current density, and can be used in applications such as DC-DC converter, AC-DC converter, or even high-current switching applications.In conclusion, the IRF9630S is a highly versatile MOSFET, capable of operating in a wide range of applications. Its performance characteristics make it ideal for power conversion, audio power amplification, and consumer electronics applications. It is capable of handling high-current, low-voltage conditions, and is able to provide the highest power efficiency in various switching and conversion applications.

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