
Allicdata Part #: | IRF9640L-ND |
Manufacturer Part#: |
IRF9640L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 11A TO-262 |
More Detail: | P-Channel 200V 11A (Tc) 3W (Ta), 125W (Tc) Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF9640L is an advanced enhancement mode of MOSFETs that is made from HEXFET technology. It has a VDSS of 55V and a RDS(ON) of 0.01Ω, which makes it ideal for applications that require high performance and low voltage drop. This type of FETs has excellent switching and RDS(ON) performance at high-speed switching frequencies and excellent power-dissipation.
The IRF9640L is a commonly used transistor in various fields because of its ability to handle large voltage and current, as well as its low RDS(ON) and fast switching times. It is capable of operating at a frequency range of up to 200 kHz and is capable of sustaining an extreme temperature up to 175°C. It has a low gate charge and high maximum drain current rating of 20A (I D ).
The IRF9640L is most commonly used in power supply circuits for switching, rectifying and inverting. It is also used in other applications such as DC/DC converter circuits, battery charger circuits and high-speed switching power supplies. It is also capable of driving high capacitive loads and can be used for impedance matching, signal subsequent stages, and circuit protection.
The working principle of the IRF9640L is based on the basic transistor theory. It is based on the field-effect transistor (FET), which is composed of a channel of silicon between the source and drain terminals. A reverse-conducting current between the gate and source terminals is needed before any signal can flow between the source and drain terminals. A positive gate voltage increases the concentration of carriers in the channel, thus allowing current to flow and reducing the RDS(ON). When the gate voltage is removed, the current flow stops and the device is in the off state.
In summary, the IRF9640L is a MOSFET of HEXFET technology that offers excellent switching and RDS(ON) performance at high-speed frequencies and excellent power-dissipation. It is perfect for high voltage and high current applications, such as power supply circuits, battery charger circuits and power supplies. It can be used for impedance matching and signal processing, and it can also serve as a circuit protector.
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