IRF9640L Allicdata Electronics
Allicdata Part #:

IRF9640L-ND

Manufacturer Part#:

IRF9640L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 200V 11A TO-262
More Detail: P-Channel 200V 11A (Tc) 3W (Ta), 125W (Tc) Through...
DataSheet: IRF9640L datasheetIRF9640L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF9640L is an advanced enhancement mode of MOSFETs that is made from HEXFET technology. It has a VDSS of 55V and a RDS(ON) of 0.01Ω, which makes it ideal for applications that require high performance and low voltage drop. This type of FETs has excellent switching and RDS(ON) performance at high-speed switching frequencies and excellent power-dissipation.

The IRF9640L is a commonly used transistor in various fields because of its ability to handle large voltage and current, as well as its low RDS(ON) and fast switching times. It is capable of operating at a frequency range of up to 200 kHz and is capable of sustaining an extreme temperature up to 175°C. It has a low gate charge and high maximum drain current rating of 20A (I D ).

The IRF9640L is most commonly used in power supply circuits for switching, rectifying and inverting. It is also used in other applications such as DC/DC converter circuits, battery charger circuits and high-speed switching power supplies. It is also capable of driving high capacitive loads and can be used for impedance matching, signal subsequent stages, and circuit protection.

The working principle of the IRF9640L is based on the basic transistor theory. It is based on the field-effect transistor (FET), which is composed of a channel of silicon between the source and drain terminals. A reverse-conducting current between the gate and source terminals is needed before any signal can flow between the source and drain terminals. A positive gate voltage increases the concentration of carriers in the channel, thus allowing current to flow and reducing the RDS(ON). When the gate voltage is removed, the current flow stops and the device is in the off state.

In summary, the IRF9640L is a MOSFET of HEXFET technology that offers excellent switching and RDS(ON) performance at high-speed frequencies and excellent power-dissipation. It is perfect for high voltage and high current applications, such as power supply circuits, battery charger circuits and power supplies. It can be used for impedance matching and signal processing, and it can also serve as a circuit protector.

The specific data is subject to PDF, and the above content is for reference

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