IRFB17N50L

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	220W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2760pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	320 mOhm @ 9.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRFB17N50L Application Field and Working Principle

The IRFB17N50L is a N-Channel Power MOSFET from Infineon Technologies. This device is the most common type of MOSFET, a term which is an acronym for metal-oxide semiconductor field-effect transistor. The IRFB17N50L is capable of delivering a large amount of current with a low on-state resistance. As a result, its application field is broad and can be used in a variety of applications.

Description of Positive and Negative Characteristics

The IRFB17N50L has some positive and negative characteristics that need to be acknowledged when evaluating if the device is suitable for a particular application. The positive characteristics include the low on-state resistance, the high voltage breakdown, and the low gate-charge. These features make the MOSFET suitable for applications such as switching and multiple-voltage operation. On the other hand, the negative characteristics of the IRFB17N50L include the significant temperature rise that occurs as a result of operating at high currents, and the capability of the device to latchup, which can damage insulation and cause permanent device failure.

Importance of Thermal Management

The IRFB17N50L is capable of dissipating substantial amounts of heat, especially when the device operates at high currents. Therefore, proper thermal management for the device is critical in order to protect it from heat degradation and excessive operation temperatures which can lead to permanent device failure.One common way of avoiding thermal problems is to make sure that the IRFB17N50L is connected to an adequate heat sink. Heat sinks are specially designed components which help to dissipate heat away from the device and keep it within safe operating temperatures.

Electrical Connections

The IRFB17N50L MOSFET has three electrical connections: a drain, a source, and a gate. These connections are too far apart to be bridged together, and each connection should be individually connected to its respective terminal on the board. The gate should be connected with a low resistance path in order for the device to operate efficiently. If the gate is not connecting to the source, the device will not function as intended.

Working Principle

The IRFB17N50L is a voltage-controlled device that works according to the principle of a simple switch. If the gate of the device is not connected to the source, the channel will remain open and no current will flow. However, when the gate of the device is connected to the source and a voltage is applied, the channel will close and the current will start to flow.The amount of current that flows in the channel is determined by the voltage applied to the gate. If the voltage applied is increased, the current will also increase. If the voltage is decreased, the current will decrease accordingly.

Conclusion

The IRFB17N50L is a useful and versatile device with a wide application field. Due to its low on-state resistance and high voltage breakdown, this device can be used in many different types of applications. However, it is important to keep in mind that the IRFB17N50L requires thermal management to avoid having permanent device failure, and the gate must be connected to the source for the device to work properly. The device works according to the principle of a simple switch, with the current flow determined by the voltage applied to the gate.

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